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100% Avalanche Test Fast Switching Characteristic Simple Drive Require


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AP02N60I-A
100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
650V
Description
TO-220CFM package widely preferred commercialindustrial applications. device suited switch mode power supplies, AC-DC converters high current high speed switching circuits.
TO-220CFM(I)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 1.26 0.176
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value Unit
Data specifications subject change without notice
200806053
AP02N60I-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
Typ.
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150
VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=20V, ID=1A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ID=2A VDS=480V VGS=10V VDS=300V ID=2A RG=10,VGS=10V RD=150 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Notes: 1.Pulse width limited Max. junction temperature. 2.Starting Tj=25oC VDD=50V L=40mH RG=25 IAS=2A. 3.Pulse test Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.5V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=2A, VGS=0V
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP02N60I-A
Drain Current
6.0V 5.5V Drain Current
=150
6.0V 5.5V
5.0V
5.0V
=4.5V
=4.5V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized DS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
1.21
=150
0.01
0.21 0.41 0.61 0.81 1.01
0.01
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP02N60I-A
1000
f=1.0MHz
Gate Source Voltage
=320V =400V =480V (pF)
Total Gate Charge (nC)
,Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
10.00
Normalized Thermal Response thjc)
Duty factor
1.00
10us 10ms
0.05
0.02 0.01 Single Pulse
0.10
100ms Single Pulse
Duty Factor Peak Rthjc
0.01 1000 10000
0.01
0.00001
0.0001
0.001
0.01
,Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
ADVANCED POWER ELECTRONICS CORP.
Package Outline TO-220CFM
SYMBOLS
Millimeters
4.30 2.30 0.50 0.95 0.45 2.30 9.70 12.50 2.91 14.70
4.70 2.65 0.70 1.20 0.65 2.60 10.00 13.00 3.41 15.40 3.20 2.54
4.90 3.00 0.90 1.50 0.80 2.90 10.40 13.50 3.91 16.10
1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions.
Part Marking Information Packing TO-220CFM
Option
LOGO
02N60I YWWSSS
Part Number Package Code Date Code (YWWSSS) YLast Digit Year WWWeek SSSSequence

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