Gate Charge Fast Switching Characteristics Simple Drive Requirement
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AP01L60T
Gate Charge Fast Switching Characteristics Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
600V 160mA
Description
Advanced Power MOSFETs utilized advanced processing techniques achieve lowest possible on-resistance, extremely efficient cost-effectiveness device. TO-92 package widely used commercial-industrial applications. TO-92
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=100 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 0.83
Units
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value Unit
Data specifications subject change without notice
200810225
AP01L60T
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Test Conditions VGS=0V, ID=1mA
Min.
Typ.
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
VGS=10V, ID=0.5A VDS=VGS, ID=250uA VDS=10V, ID=0.5A VDS=600V, VGS=0V VGS=±30V ID=100mA VDS=480V VGS=10V VDD=300V ID=1A RG=10,VGS=10V RD=300 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Drain-Source Leakage Current j=150 VDS=480V, VGS=0V
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=160mA, VGS=0V IS=1A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited Max. junction temperature. 2.Pulse test
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP01L60T
1.00
Drain Current
Drain Current
6.0V 5.5V 5.0V
=150
0.75
5.0V
4.5V
0.50
=4.0V
=4.0V
0.25
0.00
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=0.5A =10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
0.01
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP01L60T
1000
f=1.0MHz
Gate Source Voltage
100m
(pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
0.20
Drain Current
0.15
0.10
0.05
0.00
Case Temperature
Case Temperature(
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
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