wide range 90nm technology-based devices latest generation mobile phon

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90nm Flash memory subsystem solutions
wide range 90nm technology-based devices latest generation mobile phones
Offering most advanced Flash devices available, STMicroelectronics leading supplier memory subsystems mobile applications. Incorporating very latest features functionality, performance factors enhanced exceeding most demanding chipsets requirements widen user experience
Latest generation requirements
Today's latest generation mobile phones continuously require higher densities ever more advanced features maximize performance associated applications. ST's response family multi-chip package (MCP) devices that contain Flash memories 90nm technology with densities from 256Mb 1Gb. devices combine Flash memory with either PSRAM 128Mb LPSDRAM 256Mb, single, small footprint package. terms size, features performance, these latest devices perfectly tailored meet needs mobile phone market, while same time offering most cost-effective Flash solution.
down mode, read speed 133MHz, write speed 0.5MB/s). These solutions build existing established technology with enhancements, also support feature-rich mobile phone equipment including, example, high resolution cameras color screens.
Advanced Flash memory subsystem
integration different memory types within small, single package saves board space improves reliability, while ability pack large amounts memory into very small volume essential future applications, handling multimedia content fast internet connectivity. reduce application's time market, offers extensive software support data integration file management into customers' specific development platforms. devices, combined with software, provide complete memory subsystem solutions mobile phones.
Improved features
advanced 90nm devices offer series features which outperform previous generations memories (lower power consumption with deep power
www.st.com/flash
90nm Flash memory subsystem overview
Read speed Write speed Power consumption Technology Higher density Read speeds 133MHz, times faster than currently available devices. most demanding chipset requirements exceeded fast code execution advanced cellular platforms fastest ever Program throughput 0.5MByte/s, three times faster then existing Flash solutions. Supports features-rich mobile phone equipment such high resolution cameras color screens Extremely power consumption. Significant advantages both program erase operations; improved battery result newly developed deep power-down mode multi-level cell technology, cost-effectiveness reliability double storage capacity multiple bank architecture, providing read while write flexible operations 256Mb, 512Mb, MCP; Flash combined with PSRAM LPSDRAM 256Mb new, small package footprints
Product summary
90nm product portfolio offers combinations new, advanced, Flash devices with 64Mb 128Mb PSRAM, 128Mb 256Mb LPSDRAM. solutions offered package developments: TFBGA105 package includes Flash LPSDRAM memories, while TFBGA107 Flash PSRAM devices.
256Mb Flash 64Mb PSRAM 128Mb PSRAM 128Mb LPSDRAM 256Mb LPSDRAM
ST's ongoing develop release onto market, smaller Flash technologies than those currently available (65nm initially, followed 45nm) further enhance features offered. These devices perfectly suited specific application requirements terms density, technology, performance cost.
512Mb Flash
Flash
STMicroelectronics February 2006 Printed Italy rights reserved
STMicroelectronics corporate logo registered trademark STMicroelectronics group companies. other names property their respective owners.
selected STMicroelectronics sales offices fax:
China 52574820; France 55489569; Germany 4605454; Italy 8250449; Japan 57838216; Singapore 6481 5124; Sweden 58774411; Switzerland 9292900; United Kingdom Eire 1628 890391; 2678
Full product information www.st.com
Order code: FLNORWIR0206
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