Advanced Photonix, Inc. 0.040 [1.02] 1.00 [25.4] 0.100 [2.54
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Top Searches for this datasheet
GaAlAs High Power Emitters PDI-E804
Advanced Photonix, Inc.
0.040 [1.02]
1.00 [25.4] 0.100 [2.54] [0.48] [0.41] [4.27] CATHODE L.E.D. ANODE CASE 0.043 [1.09] 0.040 [1.02] 0.100 [2.54]
0.145 [3.68]
[5.41] [5.32] 0.013 [0.33]
CLEAR EPOXY HEADER
CATHODE BOTTOM SIDE ANODE
TO-46 PACKAGE
CHIP DIMENSIONS INCH [mm]
FEATURES
High output power High reliability Wide emission angle
DESCRIPTION
PDI-E804 high power GaAlAs infrared emitter packaged TO-46 metal header with clear epoxy glob top.
APPLICATIONS
Photoelectric switches Infrared sources Optical readers
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER TSTG Power Dissipation Continuous Forward Current Peak Forward Current Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* +100 +100 +240 UNITS
Relative Power Output -100
RADIATION PATTERN
Beam Angle (deg)
1/16 inch from case seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL CHARACTERISTIC Output Power Forward Voltage Reverse Breakdown Voltage Peak Wavelength TEST CONDITIONS 0.75 0.40 UNITS Spectral Bandwidth (FWHM) Terminal Capacitance 1MHz Rise Time Fall Time
Information this technical datasheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice. 2007 Advanced Photonix, Inc. rights reserved.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo 93012 Phone (805) 987-0146 (805) 484-9935 www.advancedphotonix.com
5/24/07
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