Advanced Photonix, Inc. 0.040 [1.02] 0.229 [5.82] 0.218 [5.54] 0.
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GaAlAs High Power Emitters PDI-E803
Advanced Photonix, Inc.
0.040 [1.02] 0.229 [5.82] 0.218 [5.54] 0.189 [4.80] 0.040 [1.02] 0.029 [0.74] 1.00 [25.4] [0.48] [0.41] [4.95] [4.52] 0.100 [2.54] CATHODE L.E.D. [5.38] [5.31] 0.013 [0.33] CATHODE BOTTOM SIDE ANODE LENS (WELDED) HEADER ANODE CASE 0.025 [0.64] 0.022 [0.56]
0.145 [3.68]
TO-46 PACKAGE
CHIP DIMENSIONS INCH [mm]
FEATURES
High output power High reliability Narrow emission angle
DESCRIPTION
PDI-E803 high power GaAlAs infrared emitter, packaged hermetic TO-46 metal header with dome window glass.
APPLICATIONS
Photoelectric switches Infrared sources Optical readers
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER TSTG Power Dissipation Continuous Forward Current Peak Forward Current Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* +100 +100 +240 UNITS
Relative Power Output
RADIATION PATTERN
Beam Angle (deg)
1/16 inch from case seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL TEST CONDITIONS Spectral Bandwidth (FWHM) Terminal Capacitance 1MHz Rise Time Fall Time CHARACTERISTIC Output Power Forward Voltage Reverse Breakdown Voltage Peak Wavelength 0.75 0.40 UNITS
Information this technical datasheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice. 2007 Advanced Photonix, Inc. rights reserved.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo 93012 Phone (805) 987-0146 (805) 484-9935 www.advancedphotonix.com
5/24/07
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