27/01/2005 Modelling Report FPD3000 TOM3 TOM2 Models Device

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27/01/2005 Modelling Report FPD3000 TOM3 TOM2 Models Device

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FPD3000 TOM3 TOM2 Models
27/01/2005
Modelling Report FPD3000 TOM3 TOM2 Models
Device Design Modelling Group
Filtronic Compound Semiconductor Ltd.
FPD3000 TOM3 TOM2 Models
27/01/2005
Introduction
This report describes models FPD3000 discrete p-HEMT device. models coupled with package models (given elsewhere). model describes device inbuilt inductance provided connecting bond wires. metal fixture until connecting bond wires been de-embedded.
Models
models provided different simulators these follows: TOM3 This model provides good measured data advanced charge form. This allows TOM3 model accurately model device over wide range operating conditions. This model recommended most simulators TOM2 This model provided simulators that include TOM3 within there component set. This model employs similar charge from TOM3 only simple charge model. Consequently recommend this model only used when TOM3 component present.
FPD3000 TOM3 TOM2 Models TOM3 Model
27/01/2005
TOM3 model extracted FPD3000 discrete part shown below:
External Parasitics
following network shows external parasitics present device model:
PORT
CdGround1
CdGround1 C=0.00822
CdGround2
ID=CdG round2 C=0.0 0822
ID=Idext L=0. 2414
IdExt
L=0.
TOM3/TOM2 Model
ID=Rd 0.860
PORT
IgExt
Igext L=0.1607
L=0.155
R=1.145
TOM3 TOMparms NG=10 TJ=24.85 DegC
ID=CdsExt 0.0001
CdsExt
CgGround1
ID=CgG round1 0.051
CgGround2 C=0.02196
CgGround2
ID=Is =0.0 3655
ID=Rs 0.748
IsExt L=0.0072
IsExt
Z=50
Figure Schematic fitted model including external parasitics
FPD3000 TOM3 TOM2 Models Shown below table external parasitics. CdGround1 CdGround2 CgGround1 CgGround2 IdExt IgExt 0.02 0.04024 1.863 0.0794 0.212 0.2857 IsExt CdsExt
27/01/2005
0.019 0.011 0.014 0.1506 0.15 1.75 0.0002912
Table External parasitic values
FPD3000 TOM3 TOM2 Models
27/01/2005
TOM3 Model Parameters
TOM3 model employs excellent form charge relation within pHEMT discrete. Shown below extracted parameters FPD3000 device:
ALPHA BETA LAMBDA GAMMA QGQH QGSH QGDH QGIO QGQL QGAG QGAD QGCL QGGB
-0.7587 5.809 0.000481 -0.02497 0.0447 0.6969 3.155 0.04594 0.2861 1.8E-6 7.087E-16 8.206E-16 5.087E-17 8.011E-7 1.592E-15 1.344 1.477 5.832E-17 10.97
QGG0 TAU_GD KGAMMA RGSH
9.809E-17 0.0003488 1E-11 0.8V 0.001 1000 0.0304 0.01 0.01 0.01
Table TOM3 Model Parameters
these parameters TOM3 model placed within external parasitics.
FPD3000 TOM3 TOM2 Models
27/01/2005
TOM2 Model Parameters
TOM3 model evolved from TOM3 model hence share almost exactly same form calculation non-linear current. TOM2 model only employs simple charge form hence should only used when TOM3 components available. Shown below extracted elements FPD3000 device:
ALPHA BETA GAMMA DELTA RGSH VDELTA
-0.7587 6.209 0.00053 0.0143 83.9 0.8269 0.001 0.01 0.01 0.01 1E-11
VMAX AFAC NFING
0.95V 9.87E-5 0.001551 0.0002183 0.01 0.01 9.7E4 1500 3000
Table TOM2 Model Parameters
these parameters TOM2 model placed within external parasitics.
FPD3000 TOM3 TOM2 Models
27/01/2005
Results TOM2
1500
Vstep -1.5 Vstep -1.25 Vstep Vstep -0.75 Vstep -0.5 Vstep -0.25 Vstep
1000 Current (mA)
-500 Voltage
Figure Fitted Modelled curves TOM2 model
Sparm
18GHz
10.0
-0.8
Figure Fitted Modelled S-parameters TOM2 model (biased Vg=-0.3V Vd=7V)
-1.0
0.4GHz
-10.0
10.0
FPD3000 TOM3 TOM2 Models
Results TOM3
27/01/2005
1500
Vstep -1.5 Vstep -1.25 Vstep Vstep -0.75 Vstep -0.5 Vstep -0.25 Vstep
1000 Current (mA)
-500 Voltage
Figure Fitted Modelled curves TOM3 model
Sparm
18GHz
10.0
-0.8
Figure Fitted Modelled S-parameters TOM3 model (biased Vg=-0.3V Vd=7V)
-1.0
0.4GHz
-10.0
10.0

27/01/2005 Modelling Report FPD3000 TOM3 TOM2 Models Device

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