FMA219 X-BAND MMIC Package Style: Bare Product Descript
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FMA219
FMA219
X-BAND MMIC
Package Style: Bare
Product Description
FMA219 two-stage, reactively matched pHEMT low-noise MMIC amplifier designed over 7.0GHz 11.0GHz. amplifier requires single supply off-chip component supply decoupling. Both input output ports decoupled. Grounding amplifier provided plated thru-vias bottom die, additional ground required. amplifier unconditionally stable over load states (-45°C +85°C), conditionally stable input port open-circuited.
Optimum Technology Matching® Applied GaAs GaAs MESFET InGaP SiGe BiCMOS BiCMOS SiGe GaAs pHEMT CMOS HEMT MEMS LDMOS
Features
7.0GHz 11.0GHz Operating Bandwidth 1.1dB Noise Figure 21dB Small-Signal Gain 12dBm Output Power Single Bias Supply Decoupled Input Output Ports
Applications
Noise Front Amplifiers General X-Band Gain Block
Parameter Electrical Specifications
Operating Frequency Bandwidth Small Signal Gain Operating Current Small Signal Gain Flatness Noise Figure Order Intermodulation Distortion Power Compression Input Return Loss Input Return Loss 9.5GHz 10GHz Output Return Loss Reverse Isolation Note: TAMBIENT =22°C
Min.
Specification Typ.
Max.
Unit
=+3V, =IOP =+3V, =IOP input =+3V, =IOP =+3V, =IOP
Condition
±0.5 12.5
±0.8
11.5
=+3V, =IOP, POUT =+1.5dBm =+3V =+3V, =IOP =+3V, =IOP =+3V, =IOP =+3V, =IOP
MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTOTAL RADIOand UltimateBlueare trademarks RFMD, LLC. BLUETOOTH trademark owned Bluetooth SIG, Inc., U.S.A. licensed RFMD. other trade names, trademarks registered trademarks property their respective owners. ©2006, Micro Devices, Inc.
DS090509
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
FMA219
Absolute Maximum Ratings1
Parameter
Source Voltage (VDD) Supply Current (IDD) Input Power (PIN) (For standard bias conditions) Storage Temperature (TSTG) (Non-Operating Storage) Total Power Dissipation (PTOT)2, Gain Compression (Under bias conditions) Thermal Resistance (750mW dissipation, heatsink temp 22°C)
Rating
Unit
°C/W
Caution! sensitive device.
Exceeding combination Absolute Maximum Rating conditions cause permanent damage device. Extended application Absolute Maximum Rating conditions device reduce device reliability. Specified typical performance functional operation device under Absolute Maximum Rating conditions implied. RoHS status based EUDirective2002/95/EC time this document revision). information this publication believed accurate reliable. However, responsibility assumed Micro Devices, Inc. ("RFMD") use, infringement patents, other rights third parties, resulting from use. license granted implication otherwise under patent patent rights RFMD. RFMD reserves right change component circuitry, recommended application circuitry specifications time without prior notice.
Notes: 1TAMBIENT =22°C unless otherwise noted; exceeding these absolute maximum ratings cause permanent damage device. 2Total Power Dissipation TOT) defined (PDC +PIN)-POUT, where PDC: Bias Power, PIN: Input Power, POUT: Output Power. Total Power Dissipation de-rated follows above 22°C: PTOT (150-TCASE)/JC, where TCASE =temperature package substrate. 3The quoted thermal resistance value worst-case figure assuming Gold/Tin attach onto Copper substrate. epoxy attach substrate materials lower thermal conductivity will increase Thermal Resistance. Further information assistance available request. increases linearly from 175°C/W CASE 22°C 210°C/W TCASE 145°C.
Layout
Name Description
input output Drain voltage
Coordinates
102, 1527, 1177,
Note: Coordinates referenced from bottom left corner center bond opening.
Size
1624x1624
Thickness Min. Bond Pitch Min. Bond Opening (mxm)
88x88
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
DS090509
FMA219
Typical Measured Performance Wafer
Performance (VDD =+3V, =IOP), TAMBIENT =+22°C unless stated otherwise.
A219 FREQUENCY
A219BF NOISE GURE
SSG,
Freq uency [GHz
Stability factor
Note: Multiple traces show typical variation across 150mm (6") wafer. Effect typical bond wire inductances (25µm diameter, length, each input output ports) >0.5dB decrease 11GHz), measurable effect noise figure.
Frequency GHz)
A219BF POWE TRANS CHARACT ERIS
Pout @7GHz Pout @9GHz
11.0
Pout
Pout @11GHz Comp@7GHz
Comp@9GHz Comp@11GHz
-19.0
-17.0
-15.
-11.0
-9.0
Note: Equivalent output performance exceeds 24dBm. Input typically+2dBm.
DS090509
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
FMA219
S-Parameters (VDD =3.0V, =55mA)
Freq-MHz
1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 6200 6400 6600 6800 7000 7200 7400 7600 7800 8000 8200 8400 8600 8800 9000
0.978 0.973 0.969 0.965 0.963 0.962 0.960 0.962 0.964 0.966 0.948 0.940 0.941 0.943 0.945 0.947 0.948 0.952 0.956 0.933 0.902 0.926 0.930 0.926 0.914 0.887 0.839 0.757 0.632 0.483 0.341 0.239 0.192 0.181 0.191 0.202 0.213 0.222 0.233 0.236 0.245
-107.6 -121.6 -133.8 -144.5 -154.2 -162.9 -171.0 -178.6 174.1 166.6 159.5 153.7 147.7 141.4 135.1 128.7 122.0 115.1 107.5 97.6 94.4 86.2 77.0 67.0 55.7 43.0 28.9 12.8 -3.7 -18.4 -27.2 -28.6 -21.4 -15.2 -14.5 -19.0 -27.1 -37.2 -48.1 -59.4 -71.9
0.044 0.048 0.057 0.060 0.062 0.062 0.064 0.067 0.075 0.085 0.087 0.099 0.127 0.168 0.225 0.303 0.414 0.568 0.834 1.406 0.948 1.331 1.901 2.645 3.599 4.795 6.231 7.838 9.388 10.563 11.221 11.488 11.527 11.504 11.488 11.513 11.572 11.661 11.788 11.926 12.066
-120.2 -141.6 -163.5 177.8 158.4 143.1 126.8 110.3 93.1 71.4 51.0 43.3 33.4 22.5 12.5 -7.1 -16.0 -26.0 -51.1 -69.7 -63.3 -70.9 -82.2 -95.9 -111.3 -128.7 -147.7 -168.4 170.6 150.8 133.0 117.4 103.5 91.0 79.4 68.6 58.3 48.3 38.6 29.1
0.000 0.000 0.001 0.000 0.002 0.001 0.000 0.001 0.001 0.001 0.001 0.000 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.003 0.002 0.001 0.001 0.002 0.003 0.004 0.006 0.008 0.009 0.011 0.012 0.013 0.013 0.013 0.013 0.013 0.014 0.014 0.015 0.014 0.016
108.5 97.8 63.0 51.2 22.8 16.1 10.2 17.6 -5.8 -14.0 -21.3 -30.3 -37.9 -42.5 -47.5 -43.0 -55.6 -74.0 -98.8 173.5 142.7 92.2 65.8 56.0 35.1 25.7 -23.7 -49.2 -65.1 -83.2 -97.6 -110.4 -121.3 -133.5 -140.7 -148.9 -158.1 -166.2 -174.1
0.710 0.624 0.561 0.510 0.472 0.443 0.422 0.407 0.397 0.390 0.386 0.380 0.374 0.376 0.370 0.366 0.362 0.358 0.353 0.368 0.364 0.345 0.331 0.317 0.295 0.260 0.214 0.161 0.118 0.107 0.126 0.144 0.153 0.154 0.150 0.140 0.130 0.120 0.109 0.099 0.092
-121.3 -135.2 -145.5 -153.4 -159.4 -163.9 -167.7 -171.0 -174.2 -177.1 179.9 177.2 173.9 170.8 167.8 164.4 161.1 157.7 155.0 153.6 142.3 137.6 132.2 125.6 117.6 109.1 101.6 97.6 105.0 122.7 130.4 128.7 121.6 113.4 104.2 94.3 84.4 73.1 60.1 46.0 30.5
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
DS090509
FMA219
S-Parameters (VDD =3.0V, =55mA)
Freq-MHz
9200 9400 9600 9800 10000 10200 10400 10600 10800 11000 11200 11400 11600 11800 12000 12200 12400 12600 12800 13000 13200 13400 13600 13800 14000 14200 14400 14600 14800 15000 15200 15400 15600 15800 16000
0.258 0.268 0.281 0.289 0.304 0.316 0.327 0.338 0.351 0.359 0.371 0.378 0.389 0.396 0.406 0.415 0.422 0.428 0.433 0.441 0.446 0.450 0.451 0.454 0.453 0.449 0.445 0.439 0.432 0.422 0.414 0.404 0.393 0.383 0.372
-82.3 -93.8 -104.4 -113.9 -123.7 -132.4 -140.9 -148.4 -155.6 -161.9 -168.3 -174.0 -179.6 174.6 170.3 166.3 160.5 155.6 151.0 147.0 142.1 137.7 133.0 128.9 124.3 120.2 116.0 111.8 108.0 104.6 101.0 97.4 94.7 92.0 89.2
12.205 12.347 12.518 12.666 12.791 12.935 13.005 13.087 13.173 13.234 13.295 13.317 13.337 13.344 13.269 12.804 13.211 13.202 13.133 12.807 12.820 12.570 12.357 12.077 11.698 11.282 10.841 10.386 9.936 9.453 8.938 8.451 8.009 7.592 7.179
19.9 10.9 -6.9 -15.6 -24.2 -32.7 -41.0 -49.2 -57.4 -65.6 -73.6 -81.5 -89.5 -97.2 -104.2 -113.1 -121.3 -129.4 -136.8 -145.3 -153.2 -161.5 -169.5 -177.6 174.9 167.4 160.0 152.8 145.8 139.1 132.9 126.8 120.9 115.2
0.015 0.015 0.016 0.016 0.017 0.017 0.018 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.017 0.017 0.017 0.016 0.015 0.015 0.014 0.014 0.013 0.013 0.013 0.012 0.012 0.011 0.012 0.010
177.5 172.9 164.9 159.8 152.4 145.7 141.1 133.3 125.7 121.5 115.9 109.4 103.9 97.5 93.7 88.4 83.0 78.2 74.5 68.3 64.3 59.5 54.9 50.5 46.8 40.8 37.7 38.9 33.5 30.9 28.1 29.8 27.6 27.4 25.0
0.088 0.086 0.091 0.095 0.098 0.104 0.109 0.111 0.113 0.112 0.111 0.109 0.108 0.109 0.111 0.120 0.133 0.154 0.179 0.208 0.243 0.278 0.316 0.355 0.393 0.433 0.470 0.502 0.531 0.561 0.585 0.605 0.625 0.640 0.653
14.6 -0.6 -15.4 -29.6 -42.1 -50.3 -59.2 -66.2 -72.0 -75.5 -78.3 -78.6 -77.0 -73.1 -69.1 -63.5 -57.9 -54.2 -52.2 -52.1 -53.1 -55.2 -57.9 -61.5 -65.4 -69.4 -74.2 -78.6 -83.1 -87.4 -91.8 -95.8 -99.9 -103.7 -107.4
Recommended Assembly Schematic
nominal each side Input output thin film substrates with microstrip transmission lines. Substrate thickness 250m thinner recommended.
Note: supply de-coupling capacitor (150 recommended value) should placed close MMIC practical.
dia. wire (x2) input output ports, less than 1000m length each
150pF capacitor +VDD 250m ribbon recommended
DS090509
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
FMA219
Preferred Assembly Instructions
GaAs devices fragile should handled with great care. Specially designed collets should used where possible. back metallized recommended mounting method conductive epoxy. Epoxy should applied attachment surface uniformly sparingly avoid encroachment epoxy onto face die, ideally should exceed half chip height. automated dispense Ablestick LMISR4 recommended, manual dispense Ablestick 84-1 84-1 LMIT recommended. These should cured temperature 150°C hour oven especially aside epoxy curing only. possible curing oven should flushed with nitrogen. gold-tin (80% eutectic attach melting point approximately 280°C absolute temperature being used depends leadframe material used particular application. maximum time used should kept minimum. This part gold (Au) bond pads requiring gold (99.99% pure) bondwire. recommended that 25.4µm diameter gold wire used. Recommended lead bond technique thermocompression wedge bonding with 0.001" (25µm) diameter wire. Bond force, time stage temperature, ultrasonics critical parameters settings dependent setup application being used. Ultrasonic thermosonic bonding recommended. Bonds should made from first then mounting substrate package. physical length bondwires should minimized especially when making ground connections.
Handling Precautions
avoid damage devices, care should exercised during handling. Proper Electrostatic Discharge (ESD) precautions should observed stages storage, handling, assembly, testing.
ESD/MSL Rating
These devices should treated Class 250V) using human body model defined JEDEC Standard 22A114. Further information control measures found MIL-STD-1686 MIL-HDBK-263. This unpackaged part therefore rating applies.
Application Notes Design Data
Application Notes design data including S-parameters, noise parameters, device model available request from www.rfmd.com.
Reliability
MTTF million hours channel temperature 150°C achieved process used manufacture this device.
Disclaimers
This product designed space-based life-sustaining/supporting equipment.
Ordering Information
Quantity
Standard order quanity (waffle pack) Small quantity (25) Sample quantity
Ordering Code
FMA219-000 FMA219-000SQ FMA219-000S3
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
DS090509
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