SHF-0589 0.05-3 GHz, Watt GaAs HFET Last Time Date: 14-Dec-2

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SHF-0589 0.05-3 GHz, Watt GaAs HFET Last Time Date: 14-Dec-2

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Sirenza Microdevices' SHF-0589 high performance AlGaAs/ GaAs Heterostructure (HFET) housed low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting higher improved linearity. Output power compression +33.4 when biased Class operation 7V,345mA 1.96 GHz. +46.5 third order intercept makes ideal high dynamic range, high intercept point requirements. well suited both analog digital wireless communication infrastructure subscriber equipment including cellular, PCS, fixed wireless, pager systems. Typical Gain Performance (7V,345mA)
SHF-0589
0.05-3 GHz, Watt GaAs HFET
Last Time Date: 14-Dec-2007 Final Shipment Date: 13-June-2008
Gain, Gmax (dB)
Gmax Gain
Applications Analog Digital Wireless Systems Cellular, Fixed Wireless, Pager Systems
Frequency (GHz)
Gmax
rtio
hird Inte
tura urre
itio
1536 1008
DSP,
urre
junc n-to in-s in-s
100% tested Insertion gain tested using contact board matching circuitry) during final production test. Sample tested Samples pulled from each wafer/package lot. Sample test specifications based statistical data from sample test measurements. test fixture engineering application circuit board. application circuit designed optimum combination linearity, P1dB, VSWR. Maximum recommended power dissipation specified maintain TJ<140C TL=85C. IDQ< 2.4W recommended continuous reliable operation.
information provided herein believed reliable press time. Sirenza Microdevices assumes responsibility inaccuracies omissions. Sirenza Microdevices assumes responsibility this information, such information shall entirely user's risk. Prices specifications subject change without notice. patent rights licenses circuits described herein implied granted third party. Sirenza Microdevices does authorize warrant Sirenza Microdevices product life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc. worldwide rights reserved.
Technology Broomfield, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101242
Recommended Designs Absolute Maximum Ratings
MTTF inversely proportional device junction temperature. junction temperature MTTF considerations bias condition should also satisfy following expression: where: Junction Temperature (°C) Lead Temperature (pin (°C) Thermal Resistance (°C/W)
MTTF TJ=150C exceeds hours
Parameter Drain Current Forward Gate Current Reverse Gate Current Drain-to-Source Voltage Gate-to-Source Voltage Input Power Operating Lead Temperature Storage Temperature Range Power Dissipation Channel Temperature
SHF-0589 Watt HFET
Symbol IGSF IGSR Tstor PDISS Value Graph +165 Graph Unit
Operation this device beyond these limits cause permanent damage. reliable continuous operation, device voltage current must exceed maximum operating values specified table page
Total Dissipated Power
Power Derating Curve
Design Considerations Trade-offs
SHF-0x89 depletion mode requires negative gate voltage. Normal pinchoff variation from part-topart precludes fixed gate voltage devices. Active bias circuitry manual gate bias alignment recommended maintain acceptable performance thermal). Active bias circuitry strongly recommended class operation (backoff >6dB). large signal operation backoff) class operation required maximize FET's performance. Passive gate bias circuitry generally required achieve pure class performance. This generally accomplished using voltage divider with temperature compensation. item above gate voltage should aligned each device eliminate effects pinchoff process variation. Choose operating voltage based amount backoff. large signal operation drain-source voltage should increased maximize P1dB. small signal operation OIP3 improved reducing voltage increasing current. recommended application circuit should re-optimized recommended bias condition used. Make sure quiescent bias condition does exceed recommended power dissipation limit (shown page
Operational (Tj<140C) (Tj<165C)
Lead Temperature
Technology Broomfield, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101242
Recommended Designs SHF-0589 Watt HFET
De-embedded S-Parameters (ZS=ZL=50 Ohms, VDS=7V, IDS=345mA, 25°C)
Gain Isolation S11, Frequency
Gmax Isolation
Gain
Gain, Gmax (dB)
Isolation (dB)
Frequency (GHz)
Note: S-parameters de-embedded device leads with L=50. data represents typical performace device. De-embedded s-parameters downloaded from website (www.sirenza.com).
Typical Performance Engineering Application Circuits
Freq (MHz) 1960 2140 (mA) P1dB (dBm) 32.0 33.4 32.7 -45dBc Channel Power (dBm) 25.7 26.2 23.7
DC-IV Curves
-2.0 0.2V steps T=25°
-55dBc Channel Power (dBm) 23.2 23.2 20.5
OIP3[6] (dBm) 45.0 46.5 46.4
Gain (dB) 16.3 11.5 11.1
(dB)
(dB)
(dB)
IS-95 CDMA Channel Power Channels, 885kHz offset, 30kHz Chan W-CDMA Channel Power DPCH, 5MHz offset, 3.84MHz Chan POUT= +15dBm tone, 1MHz tone spacing
Technology Broomfield, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101242
Recommended Designs Caution: sensitive
Appropriate precautions handling, packaging testing devices must observed.
SHF-0589 Watt HFET
Part Number Ordering Information
Part Number SHF-0589 Reel Size Devices/Reel 1000
Description
Function
Gate Source Drain Source Input
Description
Connection ground. holes reduce lead inductance. Place vias close ground leads possible. Output Same
Part Symbolization part will symbolized with "H5" designator signifying surface package.
Mounting Thermal Considerations very important that adequate heat sinking provided minimize device junction temperature. following items should implemented maximize MTTF performance. Multiple solder-filled vias required directly below ground (pin [CRITICAL] Incorporate large ground area with multiple plated-through vias around device. [CRITICAL] point board seating lower thermal resistance between mounting plate. Place machine screws close ground (pin possible. [CRITICAL] ounce copper improve PCB's heat spreading capability. [CRITICAL] Thermal transfer paste should used between mounting plate improve heat spreading capability. [RECOMMENDED]
Package Dimensions
.161
.177 .068
.096
.016 .019 .118
.041
Recommended Mounting Configuration Optimum Thermal Performance
Ground Plane
.059
.015
DIMENSIONS INCHES
Plated Thru Holes (0.020" DIA) SHF-0x89
Machine Screws
Technology Broomfield, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101242

SHF-0589 0.05-3 GHz, Watt GaAs HFET Last Time Date: 14-Dec-2

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