SDM-08120(Y) CLASS POWER AMPLIFIER MODULE RFMD Green, RoHS C

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SDM-08120(Y) CLASS POWER AMPLIFIER MODULE RFMD Green, RoHS C

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SDM-08120(Y) Class Power Amplifier Module
SDM-08120(Y)
CLASS POWER AMPLIFIER MODULE
RFMD Green, RoHS Compliant, Pb-Free Part Number)
DESIGNS
Product Description
RFMD's SDM-08120(Y) power module robust, impedance matched, single-stage, push-pull Class amplifier module suitable power amplifier driver output stage. power transistors fabricated using RFMD's latest, high performance LDMOS process. drop-in, no-tune solution high power applications requiring high efficiency, excellent linearity, unit-to-unit repeatability. internally matched
Optimum Technology Matching® Applied GaAs GaAs MESFET InGaP SiGe BiCMOS BiCMOS SiGe GaAs pHEMT CMOS HEMT MEMS LDMOS
Features
Available RoHS Compliant Packaging Impedance Output P1dB Single Supply Operation: Nominally High Gain: High Efficiency: Protection: JEDEC Class (2000 HBM) Base Station Driver Repeater CDMA GSM/EDGE
Specification Typ.
IDQ1 IDQ2
Parameter
Unit
°C/W Hours TFLANGE 25°C
Min.
Max.
Drain Efficiency
Input Return Loss CDMA ACPR Integrated Bandwidth CDMA ACPR Integrated Bandwidth CDMA ACPR Integrated Bandwidth
Third Order Product Signal Delay from Deviation from Linear Phase (Peak Peak) Thermal Resistance (Junction Case) 200°C Channel, MTTF Test Conditions: ZOUT 28.0
Frequency Operation Output Power Compression Gain Peak Peak Gain Variation Drain Efficiency
MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTOTAL RADIOand UltimateBlueare trademarks RFMD, LLC. BLUETOOTH trademark owned Bluetooth SIG, Inc., U.S.A. licensed RFMD. other trade names, trademarks registered trademarks property their respective owners. ©2006, Micro Devices, Inc.
EDS-104208
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
Applications
Condition
CDMA Output (Single Carrier IS-95), MHz, Watt Drain efficiency Watts Output Power, Drain efficiency Watts Output Power, Output Power, IS-95, Fwd, Offset KHz, MHz, POUT IS-95, Fwd, Offset 1.98 MHz, MHz, POUT IS-95, Fwd, Offset KHz, MHz, POUT PEP,
SDM-08120(Y)
Absolute Maximum Ratings
Parameter
Drain Voltage (VDD) Input Power Load Impedance Continuous Operation Without Damage Control (Gate) Voltage, Output Device Channel Temperature Operating Temperature Range Storage Temperature Range Rating Human Body Model
Rating
+200 +100 2000
Unit
VSWR
Caution! sensitive device.
Exceeding combination Absolute Maximum Rating conditions cause permanent damage device. Extended application Absolute Maximum Rating conditions device reduce device reliability. Specified typical performance functional operation device under Absolute Maximum Rating conditions implied. RoHS status based Directive 2002/95/EC time this document revision). information this publication believed accurate reliable. However, responsibility assumed Micro Devices, Inc. ("RFMD") use, infringement patents, other rights third parties, resulting from use. license granted implication otherwise under patent patent rights RFMD. RFMD reserves right change component circuitry, recommended application circuitry specifications time without prior notice.
Operation this device beyond these limits cause permanent damage. reliable continuous operation, device voltage current must exceed maximum operating values specified table page one.
Simplified Device Schematic
Typical Performance Curves
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
EDS-104208
SDM-08120(Y)
Typical Performance Curves (cont.)
Evaluation test fixture information available RFMD website, referred SDM-EVAL.
EDS-104208
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
SDM-08120(Y)
Flange Function VGS1 RFIN VGS2 RFOUT Description
LDMOS gate bias. VGSTH VDC. notes Module Topside ground. Internally blocked. LDMOS gate bias. VGSTH VDC. notes LDMOS drain bias. note Internally blocked. LDMOS drain bias. note
Note This module designed have it's leads hand soldered adjacent PCB. maximum soldering iron temperature should exceed 700° soldering iron should direct contact with lead longer than seconds. Refer note AN054 (www.sirenza.com) further installation instructions.
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
Note threshold voltage (VGSTH) LDMOS transistors varies with device temperature. External temperature compensation required. RFMD application notes AN-067 LDMOS Bias Temperature Compensation.
Note required corresponding specific will vary from module module differ between VGS1 VGS2 same module much ±0.10 volts normal die-to-die variation threshold voltage. LDMOS transistors.
Note Gate voltage must applied leads simultaneously with after application drain voltage prevent potentially destructive oscillations. Bias voltages should never applied module unless properly terminated both input output.
Note Internal decoupling included bias leads. additional bypass elements required, however some applications require energy storage leads accommodate modulated signals.
Baseplate provides electrical ground thermal transfer path device. Proper mounting assures optimal performance highest reliability. RFMD application note AN-054 detailed installation instructions Power Modules.
EDS-104208
SDM-08120(Y)
Package Drawing
Dimensions inches (millimeters) Refer drawing posted www.rfmd.com tolerances.
Note: Refer Application Note AN054, "Detailed Installation Instructions Power Modules" detailed mounting information.
EDS-104208
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
SDM-08120(Y)
7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com.
EDS-104208

SDM-08120(Y) CLASS POWER AMPLIFIER MODULE RFMD Green, RoHS C

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