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SDM-09120(Y) CLASS POWER AMPLIFIER MODULE RFMD Green, RoHS C
Top Searches for this datasheetSDM-09120(Y) Noise, High Gain SiGe SDM-09120(Y) CLASS POWER AMPLIFIER MODULE RFMD Green, RoHS Compliant, Pb-Free Part Number) DESIGNS Product Description RFMD's SDM-09120(Y) power module robust, impedance matched, single-stage, push-pull Class amplifier module suitable power amplifier driver output stage. power transistors fabricated using RFMD's latest, high performance LDMOS process. drop-in, no-tune solution high power applications requiring high efficiency, excellent linearity, unit-to-unit repeatability. internally matched Optimum Technology Matching® Applied GaAs GaAs MESFET InGaP SiGe BiCMOS BiCMOS SiGe GaAs pHEMT CMOS HEMT MEMS LDMOS Features Available RoHS Compliant Packaging Impedance Output P1dB Single Supply Operation: Nominally High Gain: High Efficiency: Protection: JEDEC Class (2000 HBM) Base Station Driver Repeater CDMA GSM/EDGE Specification Typ. IDQ1 IDQ2 Parameter Unit °C/W Hours TFLANGE 25°C Min. Max. Frequency Operation Output Power Compression Gain Peak Peak Gain Variation Drain Efficiency Drain Efficiency Input Return Loss Third Order Product Variation Signal Delay from Deviation from Linear Phase (Peak Peak) Thermal Resistance (Junction Case) 200°C Channel, MTTF Test Conditions: ZOUT 28.0 MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTOTAL RADIOand UltimateBlueare trademarks RFMD, LLC. BLUETOOTH trademark owned Bluetooth SIG, Inc., U.S.A. licensed RFMD. other trade names, trademarks registered trademarks property their respective owners. ©2006, Micro Devices, Inc. EDS-104211 7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com. Applications Condition Output Power, Output, Output Power, Output, Output, Change Spacing SDM-09120(Y) Absolute Maximum Ratings Parameter Drain Voltage (VDD) Input Power Load Impedance Continuous Operation Without Damage Control (Gate) Voltage, Output Device Channel Temperature Operating Temperature Range Storage Temperature Range Rating Human Body Model Rating +200 +100 2000 Unit VSWR Caution! sensitive device. Exceeding combination Absolute Maximum Rating conditions cause permanent damage device. Extended application Absolute Maximum Rating conditions device reduce device reliability. Specified typical performance functional operation device under Absolute Maximum Rating conditions implied. RoHS status based Directive 2002/95/EC time this document revision). information this publication believed accurate reliable. However, responsibility assumed Micro Devices, Inc. ("RFMD") use, infringement patents, other rights third parties, resulting from use. license granted implication otherwise under patent patent rights RFMD. RFMD reserves right change component circuitry, recommended application circuitry specifications time without prior notice. Operation this device beyond these limits cause permanent damage. reliable continuous operation, device voltage current must exceed maximum operating values specified table page one. Simplified Device Schematic Typical Performance Curves 7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com. EDS-104211 SDM-09120(Y) Typical Performance Curves (cont.) Note: Evaluation test fixture information available RFMD website, referred SDM-EVAL, EDS-104211 7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com. SDM-09120(Y) Flange Function VGS1 RFIN VGS2 RFOUT Description LDMOS gate bias. VGSTH VDC. notes Module Topside ground. Internally blocked. LDMOS gate bias. VGSTH VDC. notes LDMOS drain bias. note Internally blocked. LDMOS drain bias. note Note This module designed have it's leads hand soldered adjacent PCB. maximum soldering iron temperature should exceed 700° soldering iron should direct contact with lead longer than seconds. Refer note AN054 (www.sirenza.com) further installation instructions. 7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com. Note threshold voltage (VGSTH) LDMOS transistors varies with device temperature. External temperature compensation required. RFMD application notes AN-067 LDMOS Bias Temperature Compensation. Note required corresponding specific will vary from module module differ between VGS1 VGS2 same module much ±0.10 volts normal die-to-die variation threshold voltage LDMOS transistors. Note Gate voltage must applied leads simultaneously with after application drain voltage prevent potentially destructive oscillations. Bias voltages should never applied module unless properly terminated both input output. Note Internal decoupling included bias leads. additional bypass elements required, however some applications require energy storage leads accommodate modulated signals. Baseplate provides electrical ground thermal transfer path device. Proper mounting assures optimal performance highest reliability. RFMD application note AN-054 detailed installation instructions Power Modules. EDS-104211 SDM-09120(Y) Package Drawing Dimensions inches (millimeters) Refer drawing posted www.rfmd.com tolerances. EDS-104211 Note: Refer application note AN054, "Detailed Installation Instructions Power Modules" detailed mounting information. 7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com. SDM-09120(Y) 7628 Thorndike Road, Greensboro, 27409-9421 sales technical support, contact RFMD (+1) 336-678-5570 sales-support@rfmd.com. EDS-104211 Other recent searchesSP8J5 - SP8J5 SP8J5 Datasheet RTC-7301SF - RTC-7301SF RTC-7301SF Datasheet RTC-7301DG - RTC-7301DG RTC-7301DG Datasheet KSN-2400A-219+ - KSN-2400A-219+ KSN-2400A-219+ Datasheet JDV2S29SC - JDV2S29SC JDV2S29SC Datasheet BCM7030RB - BCM7030RB BCM7030RB Datasheet APEKA3224CGCK - APEKA3224CGCK APEKA3224CGCK Datasheet
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