Transmissive Optical Sensor with Phototransistor Output This devi

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TCST1030
Transmissive Optical Sensor with Phototransistor Output
This device compact construction where emitting-light sources detectors located faceto-face same optical axis. operating wavelength detector consists phototransistor.
10529
Applications
Position sensor shaft encoder Detection opaque material such paper,
cards, magnetic tapes etc.
Limit switch mechanical motions General purpose wherever space limited tape, begin tape streamer
Features
Package height: Plastic polycarbonate housing Ambient light protected
Connection
11970
TELEFUNKEN Semiconductors Rev. 17-Jun-96
TCST1030
Absolute Maximum Ratings
Input (Emitter)
Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol IFSM Symbol VCEO VECO Symbol Ptot Tamb Tstg Value Value Value +100 Unit Unit Unit
Tamb 25°C
Output (Detector)
Parameters Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions
Tamb 25°C
Coupler
Parameters Total power dissipation Operation temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25°C
from case,
Electrical Characteristics
Tamb 25°C
Input (Emitter)
Parameters Forward voltage Breakdown voltage Junction capacitance Test Conditions Test Conditions Test Conditions Symbol V(BR) Symbol VCEO VECO ICEO Symbol VCEsat Min. Min. Typ. Max. Typ. 1.25 Max. Unit Unit Unit
Output (Detector)
Parameters Collector emitter voltage Emitter collector voltage Collector dark current
Min. Typ.
Max.
Coupler
Parameters Collector current Collector emitter saturation voltage
TELEFUNKEN Semiconductors Rev. 17-Jun-96
TCST1030
Switching Characteristics
test circuit Parameters Turn-on time Test Conditions Symbol Min. Typ. Max. Unit
Turn-off time
foff
0.01
Adjusted through input amplitude
Channel Oscilloscope Channel
10890
Figure Test circuit
TELEFUNKEN Semiconductors Rev. 17-Jun-96
TCST1030
Typical Characteristics (Tamb 25°C, unless otherwise specified)
Total Power Dissipation 10000 ICEO- Collector Dark Current, with open Base VCE=25V IF=0
Coupled device Phototransistor IR-diode
1000
11088
11090
Tamb Ambient Temperature
Tamb Ambient Temperature
Figure Total Power Dissipation Ambient Temperature
1000.0
Figure Collector Dark Current Ambient Temperature
10.00 VCE=10V
Forward Current
100.0
Collector Current Forward Voltage
1.00
10.0
0.10
11862
0.01
11768
10.0
100.0
Forward Current
Figure Forward Current Forward Voltage
Collector Current -30-20-10 Tamb Ambient Temperature VCE=5V IF=20mA
Figure Collector Current Forward Current
10.00 IF=20mA 10mA 1.00 0.10
Relative Current Transfer Ratio
0.01
11769
10.0
100.0
11767
Collector Emitter Voltage
Figure Rel. Current Transfer Ratio Ambient Temperature
Figure Collector Current Collector Emitter Voltage
TELEFUNKEN Semiconductors Rev. 17-Jun-96
TCST1030
Typical Characteristics (Tamb 25°C, unless otherwise specified)
Current Transfer Ratio Crel Relative Collector Current VCE=5V 10.0 100.0
11087
11770
Forward Current
Displacement
Figure Current Transfer Ratio Forward Current
Saturated Operation VS=5V RL=100W
Figure Relative Collector Current Displacement
Turn Turn Time
toff
11086
Collector Current
Figure Turn Time Collector Current
TELEFUNKEN Semiconductors Rev. 17-Jun-96
TCST1030
Dimensions
12074
TELEFUNKEN Semiconductors Rev. 17-Jun-96
TCST1030
Ozone Depleting Substances Policy Statement
policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
TELEFUNKEN Semiconductors Rev. 17-Jun-96

Transmissive Optical Sensor with Phototransistor Output This devi

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