CHANNEL 0.07 TO-220/TO-220FP STripFETPOWER MOSFET PRELIMINARY DAT

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CHANNEL 0.07 TO-220/TO-220FP STripFETPOWER MOSFET PRELIMINARY DAT

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STP20NE06 STP20NE06FP
CHANNEL 0.07 TO-220/TO-220FP STripFETPOWER MOSFET
PRELIMINARY DATA TYPE P20NE06 P20NE06FP
DS(on) 0.085 0.085
TYPICAL RDS(on) 0.07 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
DESCRIPTION This Power Mosfet latest development SGS-THOMSON unique "Single Feature Size" process whereby single body implanted strip layout structure. resulting transistor shows extremely high packing density onresistance, rugged avalance characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL DC-DC DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS
Symbol dV/dt
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating actor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage emperature Max. perating Junction Temperature
Value STP20NE06 STP20NE06FP 0.47
di/dt A/µs, V(BR)DSS, TJMAX
2000
Pulse width limited safe operating area
June 1998
STP20NE06FP
THERMAL DATA
O-220 hj-ca thc- Thermal Resistance Junction-case 2.14 62.5 TO-220F
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symb Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symb (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition Min. Max.
Rating Zero Voltage Drain Current (VGS Rating Gate-body Leakage Current
Symb GS(th) ID(o Parameter Gate Threshold Voltage Test Cond ition Min. 0.07 Max. 0.085
Static Drain-source Resistance
State Drain Current D(on) DS(on)
DYNAMIC
Symb Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test Cond ition D(on) DS(on) Min. 1200 Max.
STP20NE06FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symb d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition =4.7 Min. Max.
SWITCHING
Symb r(Vof Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition =4.7 Min. Max.
SOURCE DRAIN DIODE
Symb Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test Cond ition Min. Max.
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STP20NE06FP
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
Dia.
P011C
STP20NE06FP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
STP20NE06FP
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical compone life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A.

CHANNEL 0.07 TO-220/TO-220FP STripFETPOWER MOSFET PRELIMINARY DAT

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