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CHANNEL 100V 0.014 TO-220 POWER TRANSISTOR TYPE STP16N10L DS
Top Searches for this datasheetSTP16N10L CHANNEL 100V 0.014 TO-220 POWER TRANSISTOR TYPE STP16N10L DS(on) 0.16 TYPICAL RDS(on) 0.014 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING POWER MOTOR CONTROL DC-DC DC-AC CONVERTERS SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb Parameter Drain-source Voltage (VGS Drain- gate Voltage (RGS ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating actor Peak Diode Recovery voltage slope Storage Temperature Max. perating Junction Temperature Value V/ns Pulse width limited safe operating area September 1998 STP16N10L THERMAL DATA -case -amb thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 1.67 62.5 AVALANCHE CHARACTERISTICS Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Valu Unit ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified) Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Max. Unit Rating Zero Voltage Drain Current Rating Gate-body Leakage Current (VDS Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Test ditions Min. 0.14 0.12 Max. 0.16 0.14 Unit Static Drain-source Resistance State Drain Current ID(o DS(on DYNAMIC Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test ditions ID(o DS(on Min. 1100 Max. Unit STP16N10L ELECTRICAL CHARACTERISTICS (continued) SWITCHING Symbo d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test ditions Min. Max. Unit SWITCHING Symbo (Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test ditions Min. Max. Unit SOURCE DRAIN DIODE Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test ditions Min. Max. Unit Pulsed: Pulse duration duty cycle Pulse width limited safe operating area STP16N10L TO-220 MECHANICAL DATA DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 Dia. P011C STP16N10L Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. Other recent searchesSN74HC164 - SN74HC164 SN74HC164 Datasheet SN54HC164 - SN54HC164 SN54HC164 Datasheet RH119 - RH119 RH119 Datasheet LHC7913-4 - LHC7913-4 LHC7913-4 Datasheet ICS85408I - ICS85408I ICS85408I Datasheet ECH8607 - ECH8607 ECH8607 Datasheet CM400HB-90H - CM400HB-90H CM400HB-90H Datasheet AN-60-034 - AN-60-034 AN-60-034 Datasheet
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