High Speed Silicon Photodiode BPV10NF high sensitive wide bandwid

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High Speed Silicon Photodiode BPV10NF high sensitive wide bandwid

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BPV10NF
High Speed Silicon Photodiode
BPV10NF high sensitive wide bandwidth photodiode standard plastic package. black epoxy universal filter, spectrally matched GaAs (l=950nm) GaAlAs (l=870nm) emitters. BPV10NF optimized serial infrared links according IrDA standard.
8390
Features
Extra fast response times High modulation bandwidth (>100 MHz) High radiant sensitivity Radiant sensitive area A=0.78mm2 junction capacitance Standard package with universal filter
Angle half sensitivity
Applications
Infrared high speed remote control free transmission systems with high modulation frequencies high data transmission rate requirements especially direct point point links. BPV10NF ideal design transmission systems according IrDA requirements carrier frequency based systems (e.g. FSK- coded, MHz). Recommended emitter diodes TSHF5.-series TSSF4500.
Absolute Maximum Ratings
Tamb 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol Tamb Tstg RthJA Value -55.+100 -55.+100 Unit
from body,
TELEFUNKEN Semiconductors Rev. 15-Jul-96
BPV10NF
Basic Characteristics
Tamb 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage Short Circuit Current Reverse Light Current Test Conditions MHz, mW/cm2, mW/cm2, mW/cm2, mW/cm2, mW/cm2, Symbol V(BR) TKIra s(l) -0.1 0.55 790.1050 3x10-14 3x1012 Unit
cmHz/
Temp. Coefficient
Absolute Spectral Sensitivity Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Quantum Efficiency Noise Equivalent Power VR=20V, l=950nm Detectivity VR=20V, l=950nm Rise Time Fall Time
l0.5
VR=50V, RL=50W, l=820nm VR=50V, RL=50W, l=820nm
Typical Characteristics (Tamb 25_C unless otherwise specified)
Relative Reverse Light Current 1000 Reverse Dark Current
VR=20V
8436
VR=5V Ee=1mW/cm2 l=870nm
8621
Tamb Ambient Temperature
Tamb Ambient Temperature
Figure Reverse Dark Current Ambient Temperature
Figure Relative Reverse Light Current Ambient Temperature
TELEFUNKEN Semiconductors Rev. 15-Jul-96
BPV10NF
Relative Spectral Sensitivity
8426
1000 Reverse Light Current
VR=5V l=870nm
0.01
8622
Irradiance
1050
1150
Wavelength
Figure Reverse Light Current Irradiance
Reverse Light Current mW/cm2 mW/cm2 mW/cm2
l=870nm
Figure Relative Spectral Sensitivity Wavelength
Relative Sensitivity
mW/cm2 0.05 mW/cm2
8623
0.02 mW/cm2
8624
Reverse Voltage
Figure Reverse Light Current Reverse Voltage
Figure Relative Radiant Sensitivity Angular Displacement
Diode Capacitance
8439
f=1MHz
Reverse Voltage
Figure Diode Capacitance Reverse Voltage
TELEFUNKEN Semiconductors Rev. 15-Jul-96
BPV10NF
Dimensions
12198
TELEFUNKEN Semiconductors Rev. 15-Jul-96
BPV10NF
Ozone Depleting Substances Policy Statement
policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
TELEFUNKEN Semiconductors Rev. 15-Jul-96

High Speed Silicon Photodiode BPV10NF high sensitive wide bandwid

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