N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Input

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N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Input

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BF995
N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Input mixer stages especially TV-tuners MHz.
Features
Integrated gate protection diodes High cross modulation performance noise figure
High AGC-range feedback capacitance
9279
BF995 Marking: Plastic case (SOT 143) Source; Drain; Gate Gate
Absolute Maximum Ratings
Parameters Drain source voltage Drain current Gate 1/gate 2-source peak current Total power dissipation Tamb 60°C Channel temperature Storage temperature range Symbol ±IG1/2SM Ptot Tstg Value +150 Unit
Maximum Thermal Resistance
Parameters Channel ambient glass fibre printed board 1.5) plated with Symbol RthChA Value Unit
TELEFUNKEN Semiconductors Rev. 16-Apr-96
BF995
Electrical Characteristics
Tamb 25_C, unless otherwise specified Parameters Test Conditions Drain-source breakdown voltage -VG1S -VG2S Gate 1-source breakdown voltage ±IG1S VG2S Gate 2-source breakdown voltage ±IG2S VG1S Gate 1-source leakage current ±VG1S VG2S Gate 2-source leakage current ±VG2S VG1S Drain current VG1S VG2S Gate 1-source cut-off voltage VG2S Gate 2-source cut-off voltage VG1S Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Min. 10.5 Typ. Max. Unit
Electrical Characteristics
VG2S MHz, Tamb 25°C, unless otherwise specified Parameters Test Conditions Forward transadmittance Gate 1-input capacitance Gate 2-input capacitance VG1S VG2S Feedback capacitance Output capacitance Power gain VG1S VG2S mS,f range VG2S Noise figure VG1S VG2S Type Symbol y21s Cissg1 Cissg2 Crss Coss Min. Typ. Max. Unit
nGps
TELEFUNKEN Semiconductors Rev. 16-Apr-96
BF995
Dimensions
12240
TELEFUNKEN Semiconductors Rev. 16-Apr-96
BF995
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policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
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TELEFUNKEN Semiconductors Rev. 16-Apr-96

N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Input

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