Input mixer stages VHF- UHF-tuners. Features Integrated gate
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BF988
Input mixer stages VHF- UHF-tuners.
Features
Integrated gate protection diodes High cross modulation performance noise figure High gain
High AGC-range feedback capacitance input capacitance
BF988 Marking: BF988 Plastic case Drain, Source, Gate Gate
Absolute Maximum Ratings
Parameters Drain source voltage Drain current Gate 1/gate 2-source peak current Total power dissipation Tamb 60°C Channel temperature Storage temperature range Symbol ±IG1/2SM Ptot Tstg Value +150 Unit
Maximum Thermal Resistance
Parameters Channel ambient glass fibre printed board 1.5) plated with Symbol RthChA Value Unit
TELEFUNKEN Semiconductors Rev. 29-Jan-97
BF988
Electrical Characteristics
Tamb 25°C, unless otherwise specified Parameters Test Conditions Drain-source breakdown voltage -VG1S -VG2S Gate 1-source breakdown voltage ±IG1S VG2S Gate 2-source breakdown voltage ±IG2S VG1S Gate 1-source leakage current ±VG1S VG2S Gate 2-source leakage current ±VG2S VG1S Drain current VG1S VG2S Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS BF988 BF988A BF988B IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Min. 10.5 Typ. Max. Unit
Gate 1-source cut-off voltage VG2S Gate 2-source cut-off voltage VG1S
Electrical Characteristics
VG2S MHz, Tamb 25°C, unless otherwise specified Parameters Test Conditions Forward transmittance Gate 1-input capacitance Gate 2-input capacitance VG1S VG2S Feedback capacitance Output capacitance Power gain VG2S range VG2S Noise figure VG2S Type Symbol y21s Cissg1 Cissg2 Crss Coss Min. Typ. 1.05 Max. Unit
16.5
TELEFUNKEN Semiconductors Rev. 29-Jan-97
BF988
Common Source S-Parameters VG2S
VDS/V ID/mA f/MHz -0.02 -0.10 -0.31 -0.56 -0.87 -1.26 -1.59 -2.04 -2.42 -2.88 -3.39 -3.94 -4.46 -0.02 -0.11 -0.35 -0.62 -0.97 -1.39 -1.76 -2.25 -2.67 -3.16 -3.72 -4.30 -4.87 -0.01 -0.13 -0.37 -0.66 -1.02 -1.47 -1.85 -2.36 -2.80 -3.30 -3.89 -4.49 -5.06 -7.8 -15.3 -22.8 -30.2 -37.3 -44.3 -50.9 -58.0 -64.4 -71.4 -78.3 -85.2 -91.8 -8.3 -16.1 -24.0 -31.6 -39.2 -46.4 -53.2 -60.3 -67.1 -74.1 -81.1 -88.0 -94.4 -8.4 -16.4 -24.5 -32.3 -39.8 -47.0 -54.1 -61.3 -67.9 -75.0 -82.0 -88.8 -95.2 6.01 5.87 5.69 5.42 5.17 4.85 4.54 4.25 4.02 3.78 3.42 3.21 3.01 7.84 7.70 7.49 7.21 6.93 6.59 6.27 5.97 5.71 5.46 5.07 4.85 4.63 8.62 8.46 8.26 7.96 7.66 7.33 6.98 6.68 6.42 6.15 5.75 5.52 5.30 168.4 156.3 144.2 132.9 121.5 110.6 100.4 90.2 80.6 70.8 60.5 51.6 42.0 168.5 156.6 144.8 133.6 122.5 111.9 101.9 92.1 82.8 73.3 63.3 54.6 45.4 168.6 156.8 145.2 134.0 122.9 112.3 102.6 92.8 83.7 74.3 64.6 56.0 46.9 -56.27 -50.61 -47.70 -46.19 -45.46 -45.84 -47.31 -48.19 -50.37 -49.48 -47.92 -44.65 -41.76 -55.67 -50.01 -47.20 -45.60 -44.88 -45.25 -46.51 -47.19 -49.28 -48.99 -48.03 -45.15 -42.46 -55.26 -49.61 -46.70 -45.10 -44.38 -44.65 -45.72 -46.29 -48.18 -48.49 -47.93 -45.75 -43.05 83.0 76.6 70.9 65.6 60.6 55.4 58.6 63.3 81.5 115.6 131.7 153.0 159.8 83.0 76.4 70.3 65.1 60.0 54.5 57.4 61.4 76.0 107.1 123.3 147.6 157.0 83.0 76.3 70.3 64.9 59.7 54.3 57.0 60.0 71.9 98.7 114.8 141.2 153.4 -0.02 -0.06 -0.13 -0.20 -0.28 -0.36 -0.43 -0.49 -0.52 -0.54 -0.66 -0.66 -0.66 -0.04 -0.09 -0.16 -0.23 -0.31 -0.42 -0.48 -0.55 -0.58 -0.60 -0.73 -0.73 -0.73 -0.07 -0.12 -0.20 -0.27 -0.36 -0.47 -0.53 -0.61 -0.64 -0.66 -0.77 -0.79 -0.79 -3.6 -7.3 -10.6 -14.2 -17.5 -20.5 -23.8 -26.8 -30.2 -33.4 -36.8 -40.1 -43.9 -3.7 -7.4 -10.8 -14.3 -17.9 -20.9 -24.1 -27.3 -30.6 -33.8 -37.2 -40.6 -44.3 -3.7 -7.5 -11.0 -14.4 -18.0 -20.9 -24.2 -27.4 -30.6 -33.9 -37.3 -40.8 -44.5
1000 1100 1200 1300 1000 1100 1200 1300 1000 1100 1200 1300
TELEFUNKEN Semiconductors Rev. 29-Jan-97
BF988
Typical Characteristics 25_C unless otherwise specified)
Total Power Dissipation Drain Current VG1S=
12159
VDS=
12817
-0.6
-0.2
Tamb Ambient Temperature
VG2S Gate Source Voltage
Figure Total Power Dissipation Ambient Temperature
Figure Drain Current Gate Source Voltage
issg1 Gate Input Capacitance
Drain Current
VG2S= VG1S= 0.6V 0.4V 0.2V
VDS=8V VG2S=4V f=1MHz
-0.2V -0.4V
-1.5 -1.0 -0.5
12812
Drain Source Voltage
12813
VG1S Gate Source Voltage
Figure Drain Current Drain Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
VDS= Drain Current
issg2 Gate Input Capacitance
VDS=8V VG1S=0 f=1MHz
-0.8 VG2S=-1V -0.4
12816
VG1S Gate Source Voltage
12814
VG2S Gate Source Voltage
Figure Drain Current Gate Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
TELEFUNKEN Semiconductors Rev. 29-Jan-97
BF988
Y21S Forward Transadmittance Output Capacitance
12815
VDS=8V f=1MHz VG2S=4V
VG2S=4V VG1S=0 f=1MHz
12819
Drain Source Voltage
Drain Current
Figure Output Capacitance Drain Source Voltage
800MHz Transducer Gain -0.2V -0.4V
12818
Figure Forward Transadmittance Drain Current
VG2S=-0.8V
-0.5
VG1S Gate Source Voltage
Figure Transducer Gain Gate Source Voltage
TELEFUNKEN Semiconductors Rev. 29-Jan-97
BF988
Dimensions
12242
TELEFUNKEN Semiconductors Rev. 29-Jan-97
BF988
Ozone Depleting Substances Policy Statement
policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
TELEFUNKEN Semiconductors Rev. 29-Jan-97
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