BF861A; BF861B; BF861C N-channel junction FETs Product specificat

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BF861A; BF861B; BF861C N-channel junction FETs Product specificat

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BF861A; BF861B; BF861C N-channel junction FETs
Product specification File under Discrete Semiconductors, SC07 1995
Philips Semiconductors
Philips Semiconductors
Product specification
N-channel junction FETs
FEATURES High transfer admittance input capacitance feedback capacitance noise. APPLICATIONS Preamplifiers tuners radios. DESCRIPTION N-channel symmetrical junction field effect transistors SOT23 package. PINNING SOT23 SYMBOL gate source drain DESCRIPTION
BF861A; BF861B; BF861C
handbook, halfpage
view
MAM036
Marking codes: BF861A: M33. BF861B: M34. BF861C: M35.
Fig.1 Simplified outline symbol.
CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
QUICK REFERENCE DATA SYMBOL IDSS PARAMETER drain-source voltage (DC) drain current BF861A BF861B BF861C Ptot total power dissipation forward transfer admittance BF861A BF861B BF861C Ciss Crss input capacitance reverse transfer capacitance Tamb CONDITIONS MIN. MAX. UNIT
1995
Philips Semiconductors
Product specification
N-channel junction FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VGSO VDGO Ptot Tstg Note Device mounted printed-circuit board. PARAMETER drain-source voltage (DC) gate-source voltage drain-gate voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature open drain open source
BF861A; BF861B; BF861C
CONDITIONS Tamb note
MIN.
MAX. +150
UNIT
(mW)
MRC166
Tamb
Fig.2 Power derating curve.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
THERMAL CHARACTERISTICS SYMBOL Note Device mounted printed-circuit board. CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source cut-off voltage BF861A BF861B BF861C VGSS IDSS gate-source forward voltage drain current BF861A BF861B BF861C IGSS gate cut-off current forward transfer admittance BF861A BF861B BF861C common source output conductance BF861A BF861B BF861C Ciss Crss Vn/B input capacitance reverse transfer capacitance equivalent input noise voltage CONDITIONS PARAMETER thermal resistance from junction ambient; note
BF861A; BF861B; BF861C
VALUE
UNIT
MIN. -0.2 -0.5 -0.8
TYP.
MAX.
UNIT
gate-source breakdown voltage
-1.5
nV/Hz
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
(mA)
MBD461
handbook, halfpage
MBD462
(µS)
GSoff
(mA)
Fig.3
Drain current function gate-source cut-off voltage; typical values.
Fig.4
Common-source output conductance function drain current; typical values.
handbook, halfpage
MBD463
MBD464
handbook, halfpage
(mS)
(mS)
BF861C BF861B
BF861A
(mA)
(mA)
Fig.5
Forward transfer admittance function drain current; typical values.
Fig.6
Forward transfer admittance function drain current; typical values.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD465
MBD466
handbook, halfpage
(mA)
handbook, halfpage
(mA)
BF861A
BF861A
Fig.7 Typical input characteristics.
Fig.8 Typical output characteristics.
MBD467
MBD468
handbook, halfpage
(mA)
handbook, halfpage
(mA)
BF861B
BF861B
Fig.9 Typical input characteristics.
Fig.10 Typical output characteristics.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD469
MBD470
handbook, halfpage
(mA)
handbook, halfpage
(mA)
BF861C
BF861C
Fig.11 Typical input characteristics.
Fig.12 Typical output characteristics.
handbook, halfpage
MBD471
(pF)
handbook, halfpage (nA)
MBD472
MHz.
Fig.13 Input reverse transfer capacitance functions gate-source voltage; typical values.
Fig.14 Gate current function drain-gate voltage; typical values.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
handbook, halfpage
MBD473
is,b (mS)
MBD474
(nV/
(Hz)
(MHz)
Tamb
Fig.15 Equivalent input noise function frequency; typical values.
Fig.16 Common-source input admittance; typical values.
handbook, halfpage grs,b (mS)
MBD475
handbook, halfpage
MBD476
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.17 Common-source reverse admittance; typical values.
Fig.18 Common-source forward transfer admittance; typical values.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
os,bos (mS)
MBD477
(MHz)
Tamb
Fig.19 Common-source output admittance; typical values.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
PACKAGE OUTLINE
BF861A; BF861B; BF861C
ook, full pagewidth
0.150 0.090 0.95 0.48 VIEW
0.75 0.60
MBC846
Dimensions
Fig.20 SOT23.
1995
Philips Semiconductors
Product specification
N-channel junction FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF861A; BF861B; BF861C
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995

BF861A; BF861B; BF861C N-channel junction FETs Product specificat

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