Part Number VGS(off) V(BR)GSS (mS) (pA) 2N5196 2N5197 2N5198 2N51
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Monolithic Channel JFET Duals
Part Number VGS(off) V(BR)GSS (mS) (pA)
2N5196 2N5197 2N5198 2N5199 -0.7 -0.7 -0.7 -0.7
Siliconix
2N5196/5197/5198/5199
jVGS1 VGS2j (mV)
Features
Monolithic Design High Slew Rate Offset/Drift Voltage Gate Leakage: Noise High CMRR:
Benefits
Tight Differential Match Current Improved Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal
Applications
Wideband Differential Amps High Speed,Temp Compensated, Single Ended Input Amps High Speed Comparators Impedance Converters
Description
2N5196/5197/5198/5199 JFET duals designed high performance differential amplification wide range precision test instrumentation applications. This series features tightly matched specs, gate leakage accuracy, wide dynamic range with guaranteed hermetically sealed package available with full military processing (see Military Information 2N5545/5546/5547JANTX/JANTXV data sheet). similar products noise U/SST401 series, high gain 2N5911/5912, leakage U421/423 data sheets.
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Absolute Maximum Ratings
Gate Drain, Gate Source Voltage Gate Current Lead Temperature (1/16" from case sec.) Storage Temperature 200_C Operating Junction Temperature 150_C P-37514-Rev. (07/25/94) Power Dissipation Sidea Totalb
Notes Derate mW/_C above 85_C Derate mW/_C above 85_C
2N5196/5197/5198/5199
Specificationsa 2N5196 2N5197
Limits
2N5196
Siliconix
2N5197
Parameter Static
Gate Source Breakdown Voltage Gate Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current
Symbol
Test Conditions
Typb
Unit
V(BR)GSS VGS(off) IDSS IGSS
150_C =125_C
-0.8 -1.5
-0.7 -0.2 -3.8
-0.7 -0.2 -3.8
Gate Operating Current Gate Source Voltage
Dynamic
Common Source Forward Transconductance Common Source Output Conductance Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure Ciss Crss
Matching
Differential Gate Source Voltage Gate Source Voltage Differential Change with Temperature Saturation Drain Current Ratio Transconductance Ratio Differential Output Conductance Differential Gate Current Common Mode Rejection Ratiod |VGS1 VGS2| D|VGS1 VGS2| DSS1 DSS2 gfs1 gfs2 |gos1 gos2| CMRR 125_C 0.98 0.99 0.95 0.97 0.95 0.97 mV/_C
125_C
P-37514-Rev. (07/25/94)
Siliconix
2N5196/5197/5198/5199
Limits
2N5198 2N5199
Specificationsa 2N5198 2N5199
Parameter Static
Gate Source Breakdown Voltage Gate Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Gate Source Voltage V(BR)GSS VGS(off) IDSS IGSS 150_C =125_C -0.8 -1.5 -0.2 -0.7 -3.8 -0.2 -0.7 -3.8
Symbol
Test Conditions
Typb
Unit
Dynamic
Common Source Forward Transconductance Common Source Output Conductance Common Source Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure Ciss Crss
Matching
Differential Gate Source Voltage Gate Source Voltage Differential Change with Temperature Saturation Drain Current Ratio Transconductance Ratio Differential Output Conductance |VGS1 VGS2| D|VGS1 VGS2| DSS1 DSS2 gfs1 gfs2 |gos1 gos2| 125_C 125_C 0.97 0.97 0.95 0.95 0.95 0.95 mV/_C
Common Mode Rejection Ratiod CMRR
Notes 25_C unless otherwise noted. Typical values DESIGN ONLY, guaranteed subject production testing. Pulse test: v300 duty cycle v3%. This parameter registered with JEDEC. P-37514-Rev. (07/25/94)
2N5196/5197/5198/5199
Typical Characteristics
Saturation Drain Current (mA)
Siliconix
Drain Current Transconductance Gate Source Cutoff Voltage
Forward Transconductance (mS)
Gate Leakage
Gate Leakage Current
125_C IGSS 125_C 25_C IGSS 25_C
IDSS
VGS(off) Gate Source Cutoff Voltage IDSS
Drain Gate Voltage
Output Characteristics
VGS(off)
Output Characteristics
VGS(off)
-0.3 -0.6
Drain Current (mA)
-0.2
Drain Current (mA)
-0.9 -1.2 -1.5
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4
-1.8 -2.1 -2.4
Drain Source Voltage
Drain Source Voltage
Output Characteristics
VGS(off)
Output Characteristics
VGS(off)
-0.3 -0.6 -0.9 -1.2 -1.5 -1.8
Drain Current (mA)
-0.2 -0.4
Drain Current (mA)
-0.6 -0.8 -1.0
-1.6
-1.2 -1.4
-2.1 -2.4
Drain Source Voltage
Drain Source Voltage P-37514-Rev. (07/25/94)
Siliconix
2N5196/5197/5198/5199
Transfer Characteristics
Typical Characteristics (Cont'd)
Gate Source Differential Voltage Drain Current
25_C
VGS(off) Drain Current (mA) -55_C 25_C
(mV)
VGS1 VGS2
2N5199 2N5196
125_C
-0.5
-1.0
-1.5
-2.0
-2.5
0.01
Drain Current (mA)
Gate Source Voltage
Voltage Differential with Temperature Drain Current
125_C 25_C CMRR (dB) 2N5199
Common Mode Rejection Ratio Drain Current
CMRR DVDG VGS1 VGS2
DVDG 0.01
VGS1 VGS2
2N5196
0.01
Drain Current (mA)
Drain Current (mA)
Voltage Gain
rDS(on) Drain Source Resistance
Circuit Voltage Gain Drain Current
Resistance Drain Current
VGS(off) RLgos VGS(off)
VGS(off) VGS(off)
0.01
Assume Drain Current (mA)
0.01
Drain Current (mA)
P-37514-Rev. (07/25/94)
2N5196/5197/5198/5199
Typical Characteristics (Cont'd)
Ciss Input Capacitance (pF) Crss Reverse Feedback Capacitance (pF)
Siliconix
Common Source Reverse Feedback Capacitance Gate Source Voltage
Common Source Input Capacitance Gate Source Voltage
Gate Source Voltage
Gate Source Voltage
Noise Voltage
Equivalent Input Noise Voltage Frequency
Output Conductance (mS)
Output Conductance Drain Current
VGS(off) -55_C
25_C
125_C
Frequency (Hz)
0.01
Drain Current (mA)
VGS(off)
rDS(on) Drain Source Resistance
Forward Transconductance (mS)
Common Source Forward Transconductance Drain Current
Resistance Output Conductance Gate Source Cutoff Voltage
Output Conductance (mS)
25_C
-55_C
125_C
0.01
Drain Current (mA)
VGS(off) Gate Source Cutoff Voltage P-37514-Rev. (07/25/94)
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