3N163 3N164 Siliconix 3N163/164 V(BR)DSS VGS(th)

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3N163 3N164 Siliconix 3N163/164 V(BR)DSS VGS(th)

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Channel Enhancement Mode Transistors
3N163 3N164
Siliconix
3N163/164
V(BR)DSS
VGS(th)
rDS(on)
ID(on) (mA)
Crss (pF)
(ns)
Features
Benefits
Applications
Ultra High Input Impedance Ultra Input Leakage: 0.02 Typ. High Input Impedance Isolation Amplifier High Gate Breakdown Voltage: "125 Minimize Handling Problems High Isolation without Power Smoke Detectors Normally Electrometers Analog Switching Digital Switching
Description
3N163/164 lateral channel MOSFETs designed analog switch preamplifier applications where high speed parasitic capacitances required. hermetic 206AF package compatible with military processing military standards (see Military information).
206AF
View
Case Substrate
Absolute Maximum Ratings 25_C Unless Otherwise Noted)
Drain Source Voltage Gate Source Voltage (3N163) (3N164) Storage Temperature 200_C Operating Junction Temperature 150_C Power Dissipationa Notes: Derate mW/_C above 25_C
Continuous Drain Current Lead Temperature (1/16" from case seconds) 300_C 37404 Rev. (07/04/94)
3N163/164
Specificationsa
Limits
3N163
Siliconix
3N164
Parameter Static
Drain Source Breakdown Voltage Source Drain Breakdown Voltage Gate Threshold Voltage Gate Source Voltage
Symbol
Test Conditions
Typb
Unit
V(BR)DSS V(BR)SDS VGS(th)
-0.5 125_Cd 125_Cd 125_Cd 125_Cd -100 125_Cd
-2.5 -3.5
-6.5
-2.5 -6.5
Gate Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS ISDS ID(on) rDS(on)
-200
-400
Zero Gate Voltage Source Current State Drain Currentc Drain Source Resistance
-400
-800
Dynamic
Forward Transconductancec Common Source Output Conductancec Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss
Switchinge
Turn Time Turn Time td(on) td(off) 1500 VGEN
Notes: 25_C unless otherwise noted. Typical values DESIGN ONLY, guaranteed subject production testing. Pulse test: v300 duty cycle v3%. This parameter registered with JEDEC. Switching time essentially independent operating temperature.
37404
Rev. (07/04/94)
Siliconix
3N163/164
Output Characteristics
Drain Current (mA)
Typical Characteristics
Transfer Characteristics
Drain Current (mA)
Drain Source Voltage
Gate Source Voltage
-1000 -800 Drain Current (mA) -600 -400 -200 1000
Level Output Characteristics
Forward Transconductance (mS)
Common Source Forward Transconductance Drain Current
25°C 125°C
-0.2
-0.4
-0.01
-0.1
Drain Source Voltage
Drain Current (mA)
rDS(on) Drain Source Resistance
Drain Source Resistance Gate Source Voltage
Drain Source Voltage
Level Drain Source Voltage Gate Source Voltage
125°C 25°C
Gate Source Voltage
Gate Source Voltage
37404
Rev. (07/04/94)
3N163/164
Typical Characteristics (Cont'd)
Siliconix
Drain Source Leakage Current Temperature
Capacitance Gate Source Voltage
Ciss S(off) D(off) Leakage
IS(off) ID(off)
(pF)
Coss
Crss
Gate Source Voltage Temperature (_C)
Output Conductance (mS)
Common Source Output Conductance Drain Voltage
Output Conductance (mS)
1000
Common Source Output Conductance Drain Current
ID(on) ID(on)
-0.1
-1.0
-100
Drain Source Voltage
Drain Current (mA)
Switching Time Test Circuit
Scope -VDD VOUT Scope Input pulse: Pulse width: rate: Sampling Scope td(on) VOUT -VDD td(off)
37404
Rev. (07/04/94)

3N163 3N164 Siliconix 3N163/164 V(BR)DSS VGS(th)

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