PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960

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PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960

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Ordering number:EN829I
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1481/2SC2960
High-Speed Switching Applications
Features
Fast switching speed. High breakdown voltage.
Package Dimensions
unit:mm 2033
[2SA1481/2SC2960]
2SA1481
Base Collector Emitter SANYO
Conditions Ratings (-)60 (-)50 (-)5 (-)150 (-)400 +150 Unit
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg
Electrical Characteristic 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Delay Time Rise Time Storage Time Fall Time Symbol ICBO IEBO VCE(sat) VBE(sat) VCB=(-)400V, IE=0 VEB=(-)4V, IC=0 VCE=(-)6V, IC=(-)1mA VCE=(-)6V, IC=(-)1mA VCB=(-)6V, f=1MHz IC=(-)10mA, IB=(-)1mA IC=(-)10mA, IB=(-)1mA (-)60 (-)50 (-)5 (120) tstg specified Test Circuit specified Test Circuit (190) (240) (230) (700) (390) 100* (4.0) (-)0.1 (-)0.75 (-)0.4 (-)1.1 Conditions Ratings (-)0.1 (-)0.1 560* Unit
V(BR)CBO IC=(-)10µA, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10µA, IC=0 specified Test Circuit specified Test Circuit
2SA1481/2SC2960 classified follows
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4231MH, 4097TA, No.829-1/4
2SA1481/2SC2960
Switching Time Test Circuit
No.829-2/4
2SA1481/2SC2960
No.829-3/4
2SA1481/2SC2960
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information July, 1998. Specifications information herein subject change without notice.
No.829-4/4

PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960

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