P-Channel Enhancement-Mode Transistor V(BR)DSS -200 rDS

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P-Channel Enhancement-Mode Transistor V(BR)DSS -200 rDS

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2N6851
P-Channel Enhancement-Mode Transistor
V(BR)DSS
-200
rDS(on)
0.80
-4.0
Parametric limits accordance with MIL-S-19500/564 where applicable.
TO-205AF (TO-39)
View
P-Channel MOSFET
Absolute Maximum Ratings 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction Storage Temperature Range Lead Temperature (1/16" from case sec.) 25_C 100_C 25_C 100_C
Symbol
Tstg
Limit
-200 -4.0 -2.4 -3.1
Unit
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
RthJA RthJC
Limit
Unit
_C/W
Subsequent updates this data sheet obtained facsimile calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1490.
Siliconix P-37010-Rev. 06-Jun-94
2N6851
Specifications 25_C Unless Otherwise Noted)
Limit Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) -1000 VGS, -250 -160 -160 125_C -3.3 -2.4 -2.4 125_C -2.4 -4.0 0.50 0.80 -200 -2.0 -4.0 "100 -250
Symbol
Test Condition
Typa
Unit
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss td(on) td(off) -100 -2.4 VGEN -100 -4.0 14.7 13.5 34.8 20.1
Gate-Drain Chargec Turn-On Delay Timec Rise Timec
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings Characteristics
Continuous Current Pulsed Current Diode Forward Voltageb Reverse Recovery Time Reverse Recovery Charge -4.0 -4.0 di/dt A/ms -0.8 -4.0 -2.0
Notes: design only; subject production testing. Pulse test; pulse width duty cycle Independent operating temperature.
Siliconix P-37010-Rev. 06-Jun-94
2N6851
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
Drain Current
Transfer Characteristics
-55_C 125_C
Drain Current
25_C
Drain-to-Source Voltage
Gate-to-Source Voltage
Transconductance
-55_C
1.50 1.25 rDS(on) On-Resistance 1.00
On-Resistance Drain Current
Transconductance 25_C 125_C
0.75 0.50 0.25
10.0 12.5 Drain Current
Drain Current
1250
Capacitance
Gate-to-Source Voltage
15.0 12.5 10.0
Gate Charge
1000 Capacitance (pF)
Ciss
Crss
Coss
Drain-to-Source Voltage
Total Gate Charge (nC)
Siliconix P-37010-Rev. 06-Jun-94
2N6851
Typical Characteristics (25_C Unless Otherwise Noted)
2.25 2.00 rDS(on) On-Resistance (Normalized) Source Current 1.75 1.50 1.25 1.00 0.75 0.50 Junction Temperature (_C) Source-to-Drain Voltage
On-Resistance Junction Temperature
Source-Drain Diode Forward Voltage
150_C
25_C
Thermal Ratings
Maximum Avalanche Drain Current Case Temperature
Safe Operating Area
Drain Current Drain Current Limited rDS(on)
25_C Single Pulse 1000
Case Temperature (_C) Normalized Effective Transient Thermal Impedance Duty Cycle
Drain-to-Source Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1
Siliconix P-37010-Rev. 06-Jun-94

P-Channel Enhancement-Mode Transistor V(BR)DSS -200 rDS

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