V(BR)DSS -100 rDS(on) 0.30 -6.5 Parametric li
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2N6849
V(BR)DSS
-100
rDS(on)
0.30
-6.5
Parametric limits accordance with MIL-S-19500/564 where applicable.
TO-205AF (TO-39)
View
P-Channel MOSFET
Absolute Maximum Ratings 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction Storage Temperature Range Lead Temperature (1/16" from case sec.) 25_C 100_C 25_C 100_C
Symbol
Tstg
Limit
-100 -6.5 -3.1 -3.1
Unit
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
RthJA RthJC
Limit
Unit
_C/W
Subsequent updates this data sheet obtained facsimile calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1489
Siliconix P-37010-Rev. 06-Jun-94
2N6849
Specifications 25_C Unless Otherwise Noted)
Limit Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) -1000 VGS, -250 125_C -2.1 -4.1 -4.1 125_C -4.1 -6.5 0.25 0.40 0.30 0.54 -100 -2.0 -4.0 "100 -250
Symbol
Test Condition
Typa
Unit
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss td(on) td(off) -4.1 VGEN -6.5 14.7 13.5 34.8 23.1
Gate-Drain Chargec Turn-On Delay Timec Rise Timec
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings Characteristics
Continuous Current Pulsed Current Diode Forward Voltageb Reverse Recovery Time Reverse Recovery Charge -6.5 -6.5 di/dt A/ms -0.8 -6.5 -2.0
Notes: design only; subject production testing. Pulse test; pulse width duty cycle Independent operating temperature.
Siliconix P-37010-Rev. 06-Jun-94
2N6849
Typical Characteristics (25_C Unless Otherwise Noted)
12.5
Output Characteristics
Transfer Characteristics
-55_C
10.0 Drain Current Drain Current
125C
Drain-to-Source Voltage
Gate-to-Source Voltage
Transconductance
-55_C
On-Resistance Drain Current
25_C 125_C rDS(on) On-Resistance Transconductance
Drain Current 2500
Drain Current 15.0 Gate-to-Source Voltage
Capacitance
Gate Charge
2000 Capacitance (pF)
12.5 10.0
1500
1000 Ciss Crss Drain-to-Source Voltage Coss
Total Gate Charge (nC)
Siliconix P-37010-Rev. 06-Jun-94
2N6849
Typical Characteristics (25_C Unless Otherwise Noted)
2.00 1.75 1.50 1.25 1.00 0.75 Junction Temperature (_C) Source-to-Drain Voltage Source Current
On-Resistance Junction Temperature
Source-Drain Diode Forward Voltage
rDS(on) On-Resistance (Normalized)
150_C 25_C
Thermal Ratings
Maximum Avalanche Drain Current Case Temperature
Safe Operating Area
Drain Current Drain Current Limited rDS(on)
25_C Single Pulse
Case Temperature (_C) Normalized Effective Transient Thermal Impedance Duty Cycle
1000
Drain-to-Source Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Siliconix P-37010-Rev. 06-Jun-94
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