SILICON POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTY

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SILICON POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTY

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2N6050
SILICON POWER DARLINGTON TRANSISTOR
SGS-THOMSON PREFERRED SALESTYPE DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS LINEAR SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 2N6050 silicon epitaxial-base transistors monolithic Darlington configuration mounted Jedec TO-3 metal case. inteded power linear frequency switching applications.
TO-3
INTERNAL SCHEMATIC DIAGRAM
Typ.
Typ.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Collector-Base Voltage Collector-Emitter Voltage -1.5V) Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Dissipation
Value -0.2
Unit
Storage Temperature Max. Operating Junction Temperature
June 1997
2N6050
THERMAL DATA
thj-case thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3.12 83.3
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol Parameter Collector Cut-off Current -1.5V) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Test Conditions rated rated rated rated 0.75 1KHz 1MHz 15000 Min. Typ. Max. Unit
CEO(sus) Collector-Emitter Sustaining Voltage CE(sat) BE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain
Small Signal Current Gain Collector Base Capacitance
types types
Pulsed: Pulse duration duty cycle
2N6050
TO-3 MECHANICAL DATA
MIN. 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P003F
2N6050
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics Printed Italy Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

SILICON POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTY

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