5-Line Protection Diode Array LLP75-6A Ultra compact LLP75-6A pac

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5-Line Protection Diode Array LLP75-6A Ultra compact LLP75-6A pac

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GMF05C-HS3
5-Line Protection Diode Array LLP75-6A
Ultra compact LLP75-6A package 5-line ESD-protection Surge immunity acc. 61000-4-5 IPPM leakage current ESD-immunity acc. 61000-4-2 contact discharge discharge Working voltage range VRWM Lead (Pb)-free component Component accordance RoHS 2002/95/EC WEEE 2002/96/EC
19957
19956
Marking (example only)
21001
marking Date code Type code (see table below)
Ordering Information
Device name GMF05C-HS3 Ordering code GMF05C-HS3-GS08 Taped units reel tape reel) 3000 Minimum order quantity 15000
Package Data
Device name GMF05C-HS3 Package name LLP75-6A Type code Weight Molding compound flammability rating Moisture sensitivity level Soldering conditions
level (according J-STD-020) °C/10 terminals
Please document "Vishay Green Halogen-Free Definitions (5-2008)" http://www.vishay.com/doc?99902 Document Number 85654 Rev. 1.8, 23-Sep-08 technical support, please contact: ESD-Protection@vishay.com www.vishay.com
GMF05C-HS3
Vishay Semiconductors Absolute Maximum Ratings
Rating Peak pulse current Peak pulse power Test condition BiAs-mode: each input (pin ground (pin acc. 61000-4-5; 8/20 single shot BiAs-mode: each input (pin ground (pin acc. 61000-4-5; 8/20 single shot acc. IEC61000-4-2; pulses BiAs-mode: each input (pin ground (pin Junction temperature contact discharge discharge Symbol IPPM VESD VESD TSTG Value Unit
immunity
Operating temperature Storage temperature
BiAs-Mode (5-line Bidirectional Asymmetrical protection mode)
With GMF05C-HS3 signal- data-lines protected against voltage transients. With connected ground connected signal- data-line which protected. long voltage level data- signal-line between (ground level) specified Maximum Reverse Working Voltage (VRWM) protection diode between data line ground offer high isolation ground line. protection device behaves like open switch. soon positive transient voltage signal exceeds break through voltage level protection diode, diode becomes conductive shorts transient current ground. protection device behaves like closed switch. Clamping Voltage (VC) defined BReakthrough Voltage (VBR) level plus voltage drop series impedance (resistance inductance) protection device. negative transient signal will clamped accordingly. negative transient current flowing forward direction protection diode. Forward Voltage (VF) clamps negative transient close ground level. different clamping levels forward reverse direction GMF05C-HS3 clamping behaviour Bidirectional Asymmetrical (BiAs).
20739
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technical support, please contact: ESD-Protection@vishay.com
Document Number 85654 Rev. 1.8, 23-Sep-08
GMF05C-HS3
Vishay Semiconductors Electrical Characteristics
Ratings ambient temperature unless otherwise specified
GMF05C-HS3
BiAs mode: each input (pin ground (pin Parameter Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage acc. 61000-4-5 acc. 61000-4-5 Forward clamping voltage acc. 61000-4-5 Capacitance Test conditions/remarks number line which protected VRWM acc. 61000-4-5 Symbol lines VRWM 12.5 Min. Typ. Max. Unit lines
higher surge current Peak Pulse current (IPP) needed, some protection diodes GMF05C-HS3 also used parallel order "multiply" performance. diodes switched parallel double surge power double peak pulse current IPPM) half line inductance reduced clamping voltage half line resistance reduced clamping voltage double line Capacitance double Reverse leakage current
20740
Document Number 85654 Rev. 1.8, 23-Sep-08
technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
GMF05C-HS3
Vishay Semiconductors Typical Characteristics
Tamb unless otherwise specified
Rise time
BiAs-mode
Discharge Current IESD
(mA)
20557
0.01
0.001
21205
Time (ns)
Figure Discharge Current Wave Form acc. 61000-4-2 (330 /150
Figure Typical Forward Current Forward Voltage
20548
BiAs-mode
IPPM
0.01
21206
1000 10000
Time (µs)
(µA)
Figure 8/20 Peak Pulse Current Wave Form (acc. 61000-4-5)
Figure Typical Reverse Voltage Reverse Current
BiAs-mode
BiAs-mode
(pF)
Measured acc. 61000-4-5 (8/20 wave form)
21204
21207
Figure Typical Capacitance Reverse Voltage
Figure Typical Peak Clamping Voltage Peak Pulse Current
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technical support, please contact: ESD-Protection@vishay.com
Document Number 85654 Rev. 1.8, 23-Sep-08
GMF05C-HS3
acc. 61000-4-2 contact discharge
VC-ESD
21208
(ns)
Figure Typical Clamping Performance Contact Discharge (acc. 61000-4-2)
acc. 61000-4-2 contact discharge
VC-ESD
21209
(ns)
Figure Typical Clamping Performance Contact Discharge (acc. 61000-4-2)
negative discharge
VC-ESD
positive discharge acc. 61000-4-2 contact discharge
VC-ESD
21210
VESD (kV)
Figure Typical Peak Clamping Voltage Contact Discharge (acc. 61000-4-2)
Document Number 85654 Rev. 1.8, 23-Sep-08
technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
GMF05C-HS3
Vishay Semiconductors Package Dimensions millimeters (inches): LLP75-6A
18058
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technical support, please contact: ESD-Protection@vishay.com
Document Number 85654 Rev. 1.8, 23-Sep-08
GMF05C-HS3
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively. Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) USA. Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85654 Rev. 1.8, 23-Sep-08
technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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5-Line Protection Diode Array LLP75-6A Ultra compact LLP75-6A pac

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