Elektronische Bauelemente 7.6A, 60V,RDS(ON) N-Channel Enhancement

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Elektronische Bauelemente 7.6A, 60V,RDS(ON) N-Channel Enhancement

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SSG9975
Elektronische Bauelemente 7.6A, 60V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
SOP-8
Description
0.40 0.90 0.19 0.25
SSG9975 provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
6.20 5.80 0.25
0.375
3.80 4.00
0.35 0.49
1.27Typ. 4.80 5.00 0.10~0.25
Features
RoHS Compliant Lower On-Resistance High Breakdown Voltage
Date Code
1.35 1.75
Dimensions millimeters
975SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
0.016
Unit
Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Max. Rthj-a
Ratings
62.5
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG9975
Elektronische Bauelemente 7.6A, 60V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance2
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=250uA Reference 25oC, ID=1mA VDS=VGS, ID=250uA VGS=± VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=7A VGS=4.5V, ID=5A
0.06
±100
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge
2320
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
ID=7 VDS=48V VGS=4.5
VDD=30V ID=1A VGS=10V RG=3.3 RD=30
3700
VGS=0V VDS= f=1.0MHz
VDS=10V, ID=7A
Source-Drain Diode
Parameter
Forward Voltage
Symbol
Min.
Typ.
Max.
Unit
Test Condition
IS=1.7A, VGS=0V. Is=7A, GS=0V dl/dt=100A/us
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted inch2 copper board;135 °C/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG9975
Elektronische Bauelemente 7.6A, 60V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
http://www.SeCoSGmbH.com/
Forward Characteristics Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG9975
Elektronische Bauelemente 7.6A, 60V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
Description
Typically large storage capacitor connected from this ground insure that input 1.3V open= output enable.
tage does below minimum dropout voltage during load higher than Vout order device
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page

Elektronische Bauelemente 7.6A, 60V,RDS(ON) N-Channel Enhancement

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