Elektronische Bauelemente 60V,RDS(ON) N-Channel Enhancement Mode
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SSG9971
Elektronische Bauelemente 60V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
SSG9971 provide designer with best combination fast switching, ruggedized device design, ultra on-resistance cost-effectiveness.
6.20 5.80 0.25 3.80 4.00 0.40 0.90 0.19 0.25
0.375
0.35 0.49
1.27Typ. 4.80 5.00 0.100.25
Features
Simple drive requirement gate charge
1.35 1.75
Dimensions millimeters
Date Code
9971SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS@10V Continuous Drain Current VGS@10V Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
0.016
Unit
Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient Max.
Symbol
Rthj-a
Ratings
62.5
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG9971
Elektronische Bauelemente 60V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance2
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=250uA Reference 25oC, ID=1mA VDS=VGS, ID=250uA VGS=± VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=5.0A VGS=4.5V, ID=2.5A
0.06
±100
32.5 1658
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
ID=5.0A VDS=48V VGS=10V
VDD=30V ID=5 VGS=10V RG=3.3 RD=6
VGS=0V VDS=25V f=1.0MHz
VDS=10V, ID=5.0A
Source-Drain Diode
Parameter
Forward Voltage
Symbol
Min.
Typ.
Max.
Unit
Test Condition
=1.6A VGS=0V. =5.0A VGS=0V. dl/dt=100A/us
Reverse Recovery Time Reverse Recovery Charge
29.2
Notes: 1.Pulse width limited safe operating area. 2.Pulse width300us, dutycycle2%. 3.Surface mounted inch2 copper board; 125OC/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/ changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG9971
Elektronische Bauelemente 60V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG9971
Elektronische Bauelemente 60V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
Gate Charge Characteristics
Typical Capacitance Characteristics
10ms
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
http://www.SeCoSGmbH.com/
Gate Charge Waveform
changing specification will informed individual
01-Jun-2002 Rev.
Page
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