6.8A, 20V,RDS(ON) Elektronische Bauelemente N-Channel Enhancement
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SSG9922E
6.8A, 20V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
suffix "-C" specifies halogen lead-free
SOP-8
Description
SSG9922E provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
6.20 5.80 0.25 0.40 0.90 0.19 0.25
0.375
3.80 4.00
Features
Optimal DC/DC Battery Application On-Resistance Capable 2.5V Gate Drive
0.35 0.49
1.27Typ. 4.80 5.00 0.100.25
1.35 1.75
Dimensions millimeters
9922ESS
Date Code
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, S@4.5V Continuous Drain Current S@4.5V Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
0.016
Unit
Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Max. Rthj-a
Ratings
62.5
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2004 Rev.
Page
SSG9922E
6.8A, 20V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance2
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=250uA Reference 25oC, ID=1mA VDS=VGS, ID=1mA VGS=±12V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=4.5V, ID=6A VGS=2.5V, ID=4A
0.05
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge
1730
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Gate Resistance
ID=6A VDS=16V VGS=4.5V
VDD=15V ID=1A VGS=4.5V RG=3.3 RD=15
2770
VGS=0V VDS=20V f=1.0MHz
VDS=4.5V, ID=6A f=1.0MHz
Source-Drain Diode
Parameter
Forward Voltage
Symbol
Min.
Typ.
Max.
Unit
Test Condition
=0.84A VGS=0V. VGS=0V. dl/dt=100A/us
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited safe operating area. 2.Pulse width300us, dutycycle2%. 3.Surface mounted inch2 copper board; 135OC/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/ changing specification will informed individual
01-Jun-2004 Rev.
Page
SSG9922E
6.8A, 20V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2004 Rev.
Page
SSG9922E
6.8A, 20V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2004 Rev.
Page
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