-6A, -40V,RDS(ON) Elektronische Bauelemente P-Channel Enhancement

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-6A, -40V,RDS(ON) Elektronische Bauelemente P-Channel Enhancement

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SSG9563
-6A, -40V,RDS(ON) Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SSG9563 provide designer with best Combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SOP-8 universally preferred commercial industrial surface mount application suited voltage applications such DC/DC converters.
0.35 0.49
SOP-8
0.40 0.90 6.20 5.80 0.25
0.19 0.25
0.375
3.80 4.00
1.27 Typ. 4.80 5.00 0.10 0.25
Features
Lower On-Resistance Simple Drive Requirement Fast Switching Characteristics
1.35 1.75
Dimensions millimeters
Date Code
9563SC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
-4.8 0.02
Unit
Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Max. Rthj-a
Ratings
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG9563
-6A, -40V,RDS(ON) Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current(Tj= Static Drain-Source On-Resistance
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
0.03
Max.
Unit
Test Condition
VGS=0V, ID=-250uA Reference ID=- VDS=VGS, ID=-250uA VGS=±25V VDS=-40V,VGS=0 VDS=-32V,VGS=0 VGS=-10V, ID=-6 VGS=-4.5V, ID=-4A ID=-6A VDS=-32V VGS=-4.5V
-1.0
-3.0
±100
Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
1600
VDD=-20V ID=-1A VGS=-10 RG=3.3 RD=20
2560
VGS=0V VDS=-25V f=1.0MHz
VDS=-10V, ID=-6A
Source-Drain Diode
Parameter
Forward Voltage Reverse Recovery Time
Symbol
Min.
Typ.
Max.
-1.2
Unit
Test Condition
IS=-2.0 VGS=0V. IS=-6 VGS=0V. dl/dt=100A/us
Reverse Recovery Change
Notes: Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted copper board;125 when mounted min. copper pad.
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG9563
-6A, -40V,RDS(ON) Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG9563
-6A, -40V,RDS(ON) Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page

-6A, -40V,RDS(ON) Elektronische Bauelemente P-Channel Enhancement

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