11.5A, 30V,RDS(ON) Elektronische Bauelemente N-Channel Enhancemen
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SSG6680
11.5A, 30V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
SSG6680 provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
SOP-8 universally preferred commercial industrial surface mount application suited voltage applications such DC/DC converters.
0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 6.20 5.80 0.25 0.40 0.90 0.19 0.25
0.375
3.80 4.00
Features
Surface Mount Package High Max. Rating Voltage On-Resistance
1.35 1.75
Dimensions millimeters
6680SC
Date Code
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
11.5 0.02
Unit
Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Max. Rthj-a
Ratings
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG6680
11.5A, 30V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance2
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=250uA Reference 25oC, ID=1mA VDS=VGS, ID=250uA VGS=± VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=11.5A VGS=4.5V, ID=9.5A
0.02
±100
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge
16.8 25.6 18.6 1450
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
ID=11.5A VDS=15V VGS=5V
VDD=15V ID=1A VGS=10V RG=5.5 RD=10
VGS=0V VDS=25V f=1.0MHz
VDS=15V, ID=11.5A
Source-Drain Diode
Parameter
Forward Voltage
Continuous Source Current (Body Diode)
Symbol
Min.
Typ.
Max.
Unit
Test Condition
IS=3.5A,VGS=0V,Tj=25
VD=VG=0V, VS=1.3V
1.92
Notes: 1.Pulse width limited Max. junction temperature 2.Pulse width300us, dutycycle2%.
3.Surface mounted inch2 copper board; 125°C/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG6680
11.5A, 30V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Maximum Drain Current v.s. Case Temperature http://www.SeCoSGmbH.com/
01-Jun-2002 Rev.
Type Power Dissipation
changing specification will informed individual
Page
SSG6680
11.5A, 30V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Gate Charge Characteristics
Typical Capacitance Characteristics
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG6680
11.5A, 30V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Switching Time Circuit
Switching Time Waveform
Gate Charge Circuit
Gate Charge Waveform
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
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