Elektronische Bauelemente -7.7A, -30V,RDS(ON) P-Channel Enhanceme

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Elektronische Bauelemente -7.7A, -30V,RDS(ON) P-Channel Enhanceme

Datasheet Thumbnail

Top Searches for this datasheet

SSG4957
Elektronische Bauelemente -7.7A, -30V,RDS(ON)
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
SSG4957 provide designer with best Combination fast switching, ruggedized device design, ultra on-resistance cost-effectiveness.
6.20 5.80 0.25 3.80 4.00 0.40 0.90 0.19 0.25
0.375
0.35 0.49
1.27Typ. 4.80 5.00
0.100.25
Features
on-resistance Simple drive requirement
1.35 1.75
Dimensions millimeters
Dual MOSFET Package
Date Code
4957SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range Tstg
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
-7.7 0.016 -55~+150
Unit
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
Symbol
Rthj-a
Ratings
62.5
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4957
Elektronische Bauelemente -7.7A, -30V,RDS(ON)
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 Static Drain-Source On-Resistance2
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=-250uA Reference ,ID=-1mA VDS=VGS, ID=-250uA VGS=± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A
-0.02
-1.0
-3.0
±100
2670
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
1670
Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
ID=-7A VDS=-24V VGS=-4.5V
VDD=-15V ID=-1A VGS=-10V RG=3.3 RD=15
VGS=0V VDS=-25V f=1.0MHz
VDS=-10V, ID=-7A
Source-Drain Diode
Parameter
Forward Voltage
Reverse Recovery Time Reverse Recovery Charge
Symbol
Min.
Typ.
Max.
-1.2
Unit
Test Condition
IS=1.7A, VGS=0V. Tj=25
Is=-7A, GS=0V dl/dt=100A/uS
Notes: 1.Pulse width limited safe operating area. 2.Pulse width300us, dutycycle2%.
3.Surface mounted copper board; OC/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/ changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4957
Elektronische Bauelemente -7.7A, -30V,RDS(ON)
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4957
Elektronische Bauelemente -7.7A, -30V,RDS(ON)
P-Channel Enhancement Mode Power Mos.FET
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Transfer Characteristics
Gate Charge Waveform
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page

Elektronische Bauelemente -7.7A, -30V,RDS(ON) P-Channel Enhanceme

Top Searches for this datasheet

Other recent searches