Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 RDS(
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SSG4913
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 RDS(ON)
RoHS Compliant Product suffix "-C" specifies halogen lead-free
DESCRIPTIONS FEATURES
SSG4913 provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SOP-8 package universally preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters. Simple Drive Requirement Lower On-resistance Fast Switching Performance
SOP-8
PACKAGE INFORMATION
Weight: 0.07936g
MARKING CODE
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0.40 0.90 0.19 0.25 1.27 TYP. REF.
Millimeter
Drain1
Drain2
REF.
4913SS
Date Code
Gate1
Gate2
Source1
Source2
Min. Max. 0.35 0.49 0.375 REF. 1.35 1.75 0.10 0.25 0.25 REF.
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Symbol Ratings -3.5 -2.8 +150 0.02 Unit
@TA=25 @TA=70 @TA=25 Operating Junction Storage Temperature Range TSTG Linear Derating Factor
THERMAL DATA
Parameter Thermal Resistance Junction-ambient3 Symbol RJ-AMB Value 62.5 Unit
01-December-2008 Rev.
Page
SSG4913
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 RDS(ON)
ELECTRICAL CHARACTERISTICS 25°C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS BVDSS VGS(th)
Min. -0.4
Typ. -0.028
Max. -1.0 ±100
Unit
Test Conditions -250
Reference 25°C, -250
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25) Drain-Source Leakage Current(Tj=70)
IGSS IDSS RDS(ON) Td(on) Td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
VGS, -250 -3.5 -4.5 -3.5 -2.5 -3.0 -3.5 -4.5 -4.5
SOURCE-DRAIN DIODE
Parameter Forward Voltage Continuous Source Current (Body Diode)
Notes:
Symbol
Min.
Typ.
Max. -1.2 -2.1
Unit
Test Conditions -2.1 VGS=0V -1.2
Pulse width limited Max. junction temperature. Pulse width300us, duty cycle2%.
01-December-2008 Rev.
Page
SSG4913
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 RDS(ON)
CHARACTERISTIC CURVE
01-December-2008 Rev.
Page
SSG4913
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 RDS(ON)
CHARACTERISTIC CURVES (cont'd)
01-December-2008 Rev.
Page
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