Enhancement Mode Power Mos.FET RoHS Compliant Product Channe
|
|
|
Top Searches for this datasheet
SSG4575
Enhancement Mode Power Mos.FET
RoHS Compliant Product
Channel 60V,R DS(ON) Channel -4.2A, 60V,R DS(ON)
SOP-8
Description
0.40 0.90 0.19 0.25
SSG4575 provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
SOP-8 package universally preferred commercial industrial surface mount application suited voltage applications such DC/DC converters.
0.35 0.49 1.27Typ.
0.375
6.20 5.80 0.25 3.80 4.00
4.80 5.00
0.10~0.25
1.35 1.75
Features
Simple Drive Requirement Lower On-resistance
Dimensions millimeters
Fast Switching Performance
Date Code
4575SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings N-Channel
0.016
P-Channel
-4.2 -3.3
Unit
Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Rthj-a
Ratings
62.5
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4575
Enhancement Mode Power Mos.FET
Channel 60V,R DS(ON) Channel -4.2A, 60V,R DS(ON)
Electrical Characteristics Channel( Tj=25
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 Static Drain-Source On-Resistance
Unless otherwise specified)
Typ.
Symbol
BVDSS BVDS/
Min.
Max.
Unit
Test Condition
VGS=0V, ID=250uA Reference ID=1mA VDS=VGS, ID=250uA VGS=± VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=5A VGS=4.5V, ID=3A
0.04
VGS(th) IGSS
IDSS
±100
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge
1670
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
ID=5A VDS=48V VGS=4.5V
VDD=30V ID=1A VGS=10V RG=3.3 RD=30
2670
VGS=0V VDS=25V f=1.0MHz
VDS=10V, ID=4A
Source-Drain Diode
Parameter
Forward Voltage
Reverse Recovery Time Reverse Recovery Charge
Symbol
Min.
Typ.
Max.
Unit
Test Condition
IS=1.7A, VGS=0V.
VGS=0V dl/dt=100A/uS
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted copper board; when mounted Min. copper pad.
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4575
Enhancement Mode Power Mos.FET
Channel 60V,R DS(ON) Channel -4.2A, 60V,R DS(ON)
Electrical Characteristics P-Channel( Tj=25
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70 Static Drain-Source On-Resistance2
Unless otherwise specified)
Typ.
Symbo
BVDSS BVDS/
Min.
Max.
Unit
Test Condition
VGS=0V, ID=-250uA Reference ID=-1mA VDS=VGS, ID=-250uA VGS=± VDS=-60V,VGS=0 VDS=-48V,VGS=0 VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A
-0.04
VGS(th) IGSS
IDSS
-1.0
-3.0
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge
1780
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
ID=-4A VDS=-48V VGS=-4.5V
VDS=-30V ID=-1A VGS=-10V RG=3.3 RD=30
2850
VGS=0V VDS=-25V f=1.0MHz
VDS=-10V, ID=-4A
Source-Drain Diode
Parameter
Forward Voltage
Reverse Recovery Time Reverse Recovery Charge
Symbol
Min.
Typ.
Max.
-1.2
Unit
Test Condition
IS=-1.7A, VGS=0V.
Is=-4A, VGS=0V dl/dt=100A/uS
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted copper board; when mounted Min. copper pad.
http://www.SeCoSGmbH.com/ changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4575
Enhancement Mode Power Mos.FET
Channel 60V,R DS(ON) Channel -4.2A, 60V,R DS(ON)
Characteristics Curve N-Channel
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4575
Enhancement Mode Power Mos.FET
Channel 60V,R DS(ON) Channel -4.2A, 60V,R DS(ON)
N-Channel
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
http://www.SeCoSGmbH.com/
Gate Charge Waveform
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4575
Enhancement Mode Power Mos.FET
Channel 60V,R DS(ON) Channel -4.2A, 60V,R DS(ON)
P-Channel
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
http://www.SeCoSGmbH.com/
Forward Characteristics Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4575
Enhancement Mode Power Mos.FET
Channel 60V,R DS(ON) Channel -4.2A, 60V,R DS(ON)
P-Channel
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
Other recent searches
SCAS839A - SCAS839A SCAS839A Datasheet
RB150 - RB150 RB150 Datasheet
RB159 - RB159 RB159 Datasheet
RB150S - RB150S RB150S Datasheet
RB159S - RB159S RB159S Datasheet
QIP64G - QIP64G QIP64G Datasheet
NTGS3441T1 - NTGS3441T1 NTGS3441T1 Datasheet
MRRA400 - MRRA400 MRRA400 Datasheet
MRF426 - MRF426 MRF426 Datasheet
MC74VHCT50A - MC74VHCT50A MC74VHCT50A Datasheet
DMR07C2-A - DMR07C2-A DMR07C2-A Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
