Elektronische Bauelemente Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,

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Elektronische Bauelemente Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,

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SSG4565
Elektronische Bauelemente Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,RDS(ON)
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.40 0.90 0.19 0.25
SSG4565 provide designer with best combination fast switching, ruggedized device design, Ultra on-resistance cost-effectiveness.
SOP-8 package universally preferred commercial industrial surface mount application suited voltage applications such DC/DC converters.
0.35 0.49 1.27Typ.
6.20 5.80 0.25
0.375
3.80 4.00
4.80 5.00
0.10~0.25
Features
Simple Drive Requirement Lower On-resistance
1.35 1.75
Dimensions millimeters
Fast Switching Performance
Date Code
4565SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings N-Channel P-Channel
0.016
Unit
-6.5 -5.2
Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Rthj-a
Ratings
62.5
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4565
Elektronische Bauelemente Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,RDS(ON)
Enhancement Mode Power Mos.FET
Electrical Characteristics Channel (Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70 Static Drain-Source On-Resistance
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=250uA Reference oC,ID=1mA VDS=VGS, ID=250uA VGS=± VDS=40V,VGS=0 VDS=32V,VGS=0 VGS=10V, ID=7A VGS=4.5V, ID=5A
0.03
±100
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge
1400
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
ID=7A VDS=32V VGS=4.5V
VDD=20V ID=1A VGS=10V RG=3.3 RD=20
2400
VGS=0V VDS=25V f=1.0MHz
VDS=10V, ID=7A
Source-Drain Diode
Parameter
Forward Voltage
Symbol
Min.
Typ.
Max.
Unit
Test Condition
IS=1.7A, VGS=0V. Is=7A, VGS=0V dl/dt=100A/us
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted inch2 copper board; 270°C/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/ changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4565
Elektronische Bauelemente
Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,RDS(ON)
Enhancement Mode Power Mos.FET
Electrical Characteristics P-Channel( Tj=25
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70 Static Drain-Source On-Resistance
Unless otherwise specified)
Typ.
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Max.
Unit
Test Condition
VGS=0V, ID=-250uA Reference ,ID=-1mA VDS=VGS, ID=-250uA VGS=± VDS=-40V,VGS=0 VDS=-32V,VGS=0 VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A
-0.03
-1.0
-3.0
±100
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
1440
ID=-6A VDS=-32V VGS=-4.5V
VDS=-20V ID=-1A VGS=-10V RG=3.3 RD=20
2300
VGS=0V VDS=-25V f=1.0MHz
VDS=-10V, ID=-6A
Source-Drain Diode
Parameter
Forward Voltage Reverse Recovery Time
Symbol
Min.
Typ.
Max.
-1.2
Unit
Test Condition
IS=-1.7A, VGS=0V. Is=-6A, VGS=0V
dl/dt=100A/us
Reverse Recovery Charge
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted inch2 copper board; 270°C/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/ changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4565
Elektronische Bauelemente
Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,RDS(ON)
Enhancement Mode Power Mos.FET
Characteristics Curve N-Channel
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4565
Elektronische Bauelemente
Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,RDS(ON)
Enhancement Mode Power Mos.FET
N-Channel
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
http://www.SeCoSGmbH.com/
Gate Charge Waveform
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4565
Elektronische Bauelemente
Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,RDS(ON)
Enhancement Mode Power Mos.FET
P-Channel
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4565
Elektronische Bauelemente
Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,RDS(ON)
Enhancement Mode Power Mos.FET
P-Channel
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
http://www.SeCoSGmbH.com/
Gate Charge Waveform
changing specification will informed individual
01-Jun-2002 Rev.
Page

Elektronische Bauelemente Channel 7.6A, 40V,RDS(ON) Channel 6.5A, 40V,

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