Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V

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Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V

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SSG4505
Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.40 0.90 0.19 0.25
SSG4505 provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
SOP-8 package universally preferred commercial industrial surface mount application suited voltage applications such DC/DC converters.
0.35 0.49 1.27Typ.
6.20 5.80 0.25
0.375
3.80 4.00
4.80 5.00
0.10~0.25
Features
Simple Drive Requirement Lower On-Resistance
1.35 1.75
Dimensions millimeters
Fast Switching Performance
Date Code
4505SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
0.016
Unit
-8.4 -6.7
otal Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Max. Rthj-a
Ratings
62.5
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jan-2008 Rev.
Page
SSG4505
Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
Electrical Characteristics Channel( Tj=25
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC)
Unless otherwise specified)
Typ.
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Max.
Unit
V/oC
Test Condition
VGS=0V, ID=250uA Reference ID=1mA VDS=VGS, ID=250uA VGS=± VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=6A
0.02
±100
Drain-Source Leakage Current (Tj=70
Static Drain-Source On-Resistance
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
VGS=4.5V, ID=4A
Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
1770
ID=9A VDS=24V VGS=4.5V
VDD=15V
ID=1 VGS=10V RG=3.3 RD=15
2830
VGS=0V VDS=25V f=1.0MHz
VDS=10V, ID=9A
Source-Drain Diode
Parameter
Forward Voltage
Symbol
Min.
Typ.
Max.
Unit
Test Condition
IS=1.7A ,VGS=0V IS=9A,V GS=0V dl/dt=100A/us
Reverse Recovery Time Reverse Recovery Charge
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted inch2 copper board;135 °C/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jan-2008 Rev.
Page
SSG4505
Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
Electrical Characteristics P-Channel( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=-250uA Reference 25oC, ID=-1mA VDS=VGS, ID=-250uA VGS=± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-8A
-0.02
-1.0
-3.0
±100
Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
VGS=-4.5V, ID=-4A
Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
1580
ID=-8A VDS=-24V VGS=-4.5V
VDS=-15V
ID=-1A VGS=-10V RG=3.3 RD=15
2530
VGS=0V VDS=-25V f=1.0MHz
VDS=-10V, ID=-8A
Source-Drain Diode
Parameter
Forward Voltage
Symbol
Min.
Typ.
Max.
-1.2
Unit
Test Condition
IS=-1.7A, VGS=0V IS=-8A,VGS=0V dl/dt=100A/us
Reverse Recovery Time Reverse Recovery Charge
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted inch2 copper board;135 °C/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/ changing specification will informed individual
01-Jan-2008 Rev.
Page
SSG4505
Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
Characteristics Curve N-Channel
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
http://www.SeCoSGmbH.com/
Forward Characteristics Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jan-2008 Rev.
Page
SSG4505
Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
N-Channel
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
http://www.SeCoSGmbH.com/
Gate Charge Waveform
changing specification will informed individual
01-Jan-2008 Rev.
Page
SSG4505
Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
P-Channel
Description
Typically large storage capacitor connected from this ground insure that input 1.3V
open= output enable.
tage does below minimum dropout voltage during load higher than Vout order device
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jan-2008 Rev.
Page
SSG4505
Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
P-Channel
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
tp://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jan-2008 Rev.
Page

Elektronische Bauelemente Channel 10A, 30V,RDS(ON) Channel -8.4A, -30V

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