Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(
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SSG4501
Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.40 0.90 0.19 0.25
SSG4501 provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
SOP-8 package universally preferred commercial industrial surface mount application suited voltage applications such DC/DC converters.
0.35 0.49 1.27Typ.
6.20 5.80 0.25
0.375
3.80 4.00
4.80 5.00
0.10~0.25
Features
Simple Drive Requirement Lower On-resistance
1.35 1.75
Dimensions millimeters
Fast Switching Performance
Date Code
4501SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
0.016
Unit
-5.3 -4.7
otal Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Max. Rthj-a
Ratings
62.5
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4501
Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
Electrical Characteristics Channel( Tj=25
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 Static Drain-Source On-Resistance2
Unless otherwise specified)
Typ.
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Max.
Unit
Test Condition
VGS=0V, ID=250uA Reference ID=1mA VDS=VGS, ID=250uA VGS=± VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=7A VGS=4.5V, ID=5A
0.02
±100
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
18.8
ID=7A VDS=24V VGS=4.5V
VDD=15V ID=1A VGS=10V RG=3.3 RD=15
VGS=0V VDS=25V f=1.0MHz
VDS=10V, ID=7A
Source-Drain Diode
Parameter
Forward Voltage
Symbol
Min.
Typ.
Max.
1.67
Unit
Test Condition
IS=7A, VGS=0V.Tj=25 VD=VG=0V,VS=1.2V
Continous Source Current (Body Diode)
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted inch2 copper board;135 °C/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4501
Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
Electrical Characteristics P-Channel( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=-250uA Reference 25oC, ID=-1mA VDS=VGS, ID=-250uA VGS=± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A
-0.028
-1.0
-3.0
±100
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
ID=-5.3A VDS=-15V VGS=-10V
VDS=-15V ID=-1A VGS=-10V RG=6 RD=15
VGS=0V VDS=-15V f=1.0MHz
VDS=-10V, ID=-5.3A
Source-Drain Diode
Parameter
Forward Voltage
Symbol
Min.
Typ.
Max.
-1.2 -1.67
Unit
Test Condition
IS=-2.6A,VGS=0V.Tj=25 VD=VG=0V,VS=-1.2V
Continous Source Current (Body Diode)
Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse width300us, dutycycle2%. 3.Surface mounted inch2 copper board;135 °C/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4501
Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
Characteristics Curve N-Channel
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
http://www.SeCoSGmbH.com/
Maximum Drain Current v.s. Case Temperature
Type Power Dissipation
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4501
Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
N-Channel
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Gate Charge Characteristics
Typical Capacitance Characteristics
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4501
Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
N-Channel
Switching Time Circuit
Switching Time Waveform
Gate Charge Circuit
Gate Charge Waveform
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4501
Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
P-Channel
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Maximum Drain Current http://www.SeCoSGmbH.com/ v.s. Case Temperature
01-Jun-2002 Rev.
Type Power Dissipation
changing specification will informed individual
Page
SSG4501
Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
P-Channel
Description
Typically large storage capacitor connected from this ground insure that input 1.3V open= output enable.
tage does below minimum dropout voltage during load higher than Vout order device
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Gate Charge Characteristics
Typical Capacitance Characteristics
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4501
Elektronische Bauelemente Channel 30V,RDS(ON) Channel -5.3A, -30V,RDS(ON)
Enhancement Mode Power Mos.FET
P-Channel
Switching Time Circuit
Switching Time Waveform
Gate Charge Circuit
Gate Charge Waveform
tp://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.A
Page
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