-8A, -30V,RDS(ON) Elektronische Bauelemente P-Channel Enhancement

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-8A, -30V,RDS(ON) Elektronische Bauelemente P-Channel Enhancement

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SSG4435
-8A, -30V,RDS(ON) Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
SSG4435 provide designer with best Combination fast switching, ruggedized device design, Ultra on-resistance cost-effectiveness.
SOP-8 universally preferred commercial industrial surface mount application suited voltage applications such DC/DC converters.
0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 3.80 4.00 6.20 5.80 0.25 0.40 0.90 0.19 0.25
0.375
Features
on-resistance Simple drive requirement
1.35 1.75
Dimensions millimeters
Fast switching Characteristic
Date Code
4435SC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
0.02
Unit
Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient (Max)
Symbol
Rthj-a
Ratings
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4435
Elektronische Bauelemente -8A, -30V,RDS(ON) P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70 Static Drain-Source On-Resistance
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=-250uA Reference C,ID=-1mA VDS=VGS, ID=-250uA VGS=± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A
-0.037
-1.0
-3.0
±100
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
ID=-4.6A VDS=-15V VGS=-10V
2800 1400
VDD=-15V ID=-1A VGS=-10V RG=6 RD=15
VGS=0V VDS=-15V f=1.0MHz
VDS=-10V, ID=-8A
Source-Drain Diode
Parameter
Forward Voltage
Symbol
Min.
Typ.
-0.75
Max.
-1.2
Unit
Test Condition
IS=-2.1A, VGS=0V.
VD=VG=0V, VS=-1.2V
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
-2.1
Notes: 1.Pulse width limited safe operating area. 2.Pulse width300us, dutycycle2%.
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4435
Elektronische Bauelemente -8A, -30V,RDS(ON) P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
http://www.SeCoSGmbH.com/
Maximum Drain Current v.s. Case Temperature
Type Power Dissipation
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4435
Elektronische Bauelemente -8A, -30V,RDS(ON) P-Channel Enhancement Mode Power Mos.FET
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Gate Charge Characteristics
Typical Capacitance Characteristics
Forward Characteristics Reverse Diode
http://www.SeCoSGmbH.com/
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4435
Elektronische Bauelemente -8A, -30V,RDS(ON) P-Channel Enhancement Mode Power Mos.FET
Switching Time Circuit
Switching Time Waveform
Gate Charge Circuit
Gate Charge Waveform
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page

-8A, -30V,RDS(ON) Elektronische Bauelemente P-Channel Enhancement

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