13.8A, 30V,RDS(ON) Elektronische Bauelemente N-Channel Enhancemen

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13.8A, 30V,RDS(ON) Elektronische Bauelemente N-Channel Enhancemen

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SSG4424
13.8A, 30V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.40 0.90 0.19 0.25
ruggedized device design, Ultra on-resistance cost-effectiveness.
SOP-8 universally preferred commercial industrial surface mount application suited voltage applications such DC/DC converters.
0.35 0.49 1.27 Typ.
0.375
6.20 5.80 0.25
3.80 4.00
4.80 5.00
0.10 0.25
Features
on-resistance Simple drive requirement
1.35 1.75
Dimensions millimeters
Fast switching Characteristic
Date Code
4424SC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol
ID@TA=25 ID@TA=70 PD@TA=25
Ratings
13.8 0.02
Unit
Total Power Dissipation Linear Derating Factor Operating Junction Storage Temperature Range
Tstg
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Rthj-a
Ratings
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4424
Elektronische Bauelemente 13.8A, 30V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 Static Drain-Source On-Resistance2
Symbol
BVDSS BVDS/ VGS(th) IGSS IDSS
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=250uA Reference oC,ID=1mA VDS=VGS, ID=250uA VGS=± VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=13A VGS=4.5V, ID=10A
0.02
±100
1920
RDS(ON) Td(ON) Td(Off) Ciss Coss Crss
Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
Gate Resistance
ID=10A VDS=15V VGS=5V
VDD=25V ID=1A VGS=5V RG=3.3 RD=25
3070
VGS=0V VDS=15V f=1.0MHz
VDS=10V, ID=13A
f=1.0MHz
Source-Drain Diode
Parameter
Forward Voltage2
Reverse Recovery Time
Symbol
Min.
Typ.
Max.
Unit
Test Condition
IS=2.1A, VGS=0V.
Is=13A, VGS=0V dl/dt=100A/uS
Reverse Recovery Charge
Notes: 1.Pulse width limited safe operating area. 2.Pulse width300us, dutycycle2%.
3.Surface mounted inch2 copper board; OC/W when mounted min. copper pad.
http://www.SeCoSGmbH.com/ changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4424
Elektronische Bauelemente 13.8A, 30V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
http://www.SeCoSGmbH.com/
Forward Characteristics Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
changing specification will informed individual
01-Jun-2002 Rev.
Page
SSG4424
Elektronische Bauelemente 13.8A, 30V,RDS(ON)
N-Channel Enhancement Mode Power Mos.FET
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Circuit
Gate Charge Waveform
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page

13.8A, 30V,RDS(ON) Elektronische Bauelemente N-Channel Enhancemen

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