Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 RDS(

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Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 RDS(

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SSG4403
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 RDS(ON)
RoHS Compliant Product suffix "-C" specifies halogen lead-free
SSG4403 uses advanced trench technology provide excellent on-resistance, gate charge operation with gate voltages 2.5V. device suitable load switch applications.
FEATURES
Gate Charge Lower On-resistance Fast Switching Characteristic
PACKAGE DIMENSIONS
SOP-8
0.40 0.90 6.20 5.80 0.25
0.19 0.25
0.375
3.80 4.00
0.35 0.49
1.27Typ. 4.80 5.00 0.100.25
1.35 1.75
Dimensions millimeters
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol @Ta=25 @Ta=70 @Ta=25 Tstg
Ratings -6.1 -5.1 +150 0.02
Unit
Total Power Dissipation
Operating Junction Storage Temperature Range
Linear Derating Factor
THERMAL DATA
Parameter Thermal Resistance Junction-ambient
Symbol Max. Rj-amb
Value
Unit
01-June-2005 Rev.
Page
SSG4403
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 RDS(ON)
P-CHANNEL ELECTRICAL CHARACTERISTICS 25°C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25) Drain-Source Leakage Current(Tj=55)
Symbol BVDSS VGS(th) IGSS IDSS
Min. -0.7
Typ. 44.7 16.5
Max. -1.3 ±100
Unit
Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-5A VGS= ±12V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-6.1A
Static Drain-Source On-Resistance2
RDS(ON)
VGS=-4.5V, ID=-5A VGS=-2.5 ID=-1 ID=-5 VDS=-15 VGS=-4.5
Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Td(on) Td(off) Ciss Coss Crss
VDS=-15 ID=-10 RG=6 RL=2.4
VGS=0 VDS=-15 f=1.0
SOURCE-DRAIN DIODE
Parameter Forward Voltage2
Continuous Source Current (Body Diode) Reverse Recovery Time2 Reverse Recovery Charge
Notes:
Symbol
Min.
Typ. 22.7 15.9
Max. -1.0 -4.2
Unit
Test Conditions IS=-1A, VGS=0
-5A, Tj=25°C dl/dt 100A/us
Pulse width limited Max. junction temperature. Pulse width300us, duty cycle2%. Mounted copper board; °C/W when mounted Min. copper pad.
01-June-2005 Rev.
Page
SSG4403
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 RDS(ON)
CHARACTERISTIC CURVE
01-June-2005 Rev.
Page
SSG4403
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 RDS(ON)
CHARACTERISTIC CURVE (cont'd)
01-June-2005 Rev.
Page

Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 RDS(

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