Type Plastic Encapsulated Transistor RoHS Compliant Product

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Type Plastic Encapsulated Transistor RoHS Compliant Product

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BC635 BC637 BC639
Type Plastic Encapsulated Transistor
RoHS Compliant Product
suffix "-C" specifies halogen lead-free
TO-92
14.3±0.2
4.5±0.2
FEATURE High current transistor
4.55±0.2
3.5±0.2
0.46+0.1 -0.1 (1.27 Typ.
0.43+0.08 -0.07
1.25-0.2 2.54±0.1
+0.2
Emitter Collector Base
MAXIMUM RATINGS (TA=25 unless otherwise specified)
PARAMETERS Collector Emitter Voltage BC635 BC637 BC639 Collector Base Voltage BC635 BC637 BC639 Emitter Base Voltage Collector Current Continuous Collector Power Dissipation Junction, Storage Temperature
SYMBOLS VCEO
VALUES
UNIT
VCBO
VEBO TJ,TSTG
0.625 150,
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise specified)
PARAMETERS Collector emitter breakdown voltage Collector cut-off current Emitter cut-off current SYMBOL V(BR)CEO hFE(1) hFE(2) current gain hFE(3) Collector emitter saturation voltage Base emitter voltage Transition frequency VCE(sat) TEST CONDITIONS IC=10mA, IB=0 BC635 BC637 VCB=30V, IE=0 VEB=5V, IB=0 VCE=2V, IC=5mA VCE=2V, IC=150mA BC635 BC637-10/BC639-10 BC637-16/BC639-16 VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz BC639 UNIT
CLASSIFICATION FE(2)
RANK RANGE
BC635 40-250 BC637-10, BC639-10 63-160 BC637-16, BC639-16 100-250
changing specification will informed individual
01-Jun-2002 Rev.
Page
BC635 BC637 BC639
Type Plastic Encapsulated Transistor
Typical Characteristics
changing specification will informed individual
01-Jun-2002 Rev.
Page

Type Plastic Encapsulated Transistor RoHS Compliant Product

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