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Transistor RoHS Compliant Product Plastic-Encapsulate Transi


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2SA1020
Transistor
RoHS Compliant Product
Plastic-Encapsulate Transistors
suffix "-C" specifies halogen lead-free
O-92
6.0±0.2
±0.2
FEATURE Power Amplifier Applications
1.0±0.1
Symbol VCBO VCEO VEBO
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Storage Temperature
Value -55~+150
Units
±0.2
0.50 +0.1 -0.1 (1.50 Typ.) +0.1 -0.1 ±0.1 0.45 +0.1 -0.1
MAXIMUM RATINGS
Ta=25 unless otherwise noted
TJ,Tstg
+0.3 -0.2
8.6±0.2
Emitter Collector Base
Unit:
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Satruation Voltage Current Gain Gain-Bandwidth Product Output Capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE1
Typ.
Unit
Test Conditions C=-100µA,IE=0 C=-1mA,IB=0 E=-100µA,IC=0 VCB=-50V,IE=0 VBE=-5 V,IC=0 1A,IB=-50mA A,IB=- 50mA VCE=-2 500A VCE=-2 IC=- 500mA VCB=-10 f=1MHz
-0.5 -1.2
Classification hFE1
Rank Range 70~140 120~240
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev.
changing specification will informed individual
Page
2SA1020
Transistor
Plastic-Encapsulate Transistors
Typical Characteristics
2SA1020
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev.
changing specification will informed individual
Page
2SA1020
Transistor
Plastic-Encapsulate Transistors
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev.
changing specification will informed individual
Page

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