200mA,60V,RDS(ON) Elektronische Bauelemente N-Channel Enhancement
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2N7000
200mA,60V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
2N7000 designed high voltage, high speed applications such switching regulators, converters, solenoid relay drives.
SEATING PLANE
TO-92
Drain
REF.
Gate
Source
Millimeter Min. Max. 4.45 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF.
Millimeter Min. Max. 4.44 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage -Continuous -Non-Repetitive 50us) Drain Current -Continuous -Pulsed Power Dissipation TA=25 -Derate Above Thermal Resistance, Junction-To-Ambient Operating Junction Storage Temperature Range Max. Lead Temperature Soldering Purposes, 1/16" From Case Seconds
Symbol
VGSM Tstg
Ratings
0.35 -55~+150
Unit
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
2N7000
200mA,60V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-Resistance
Symbol
BVDSS VGS(th) IGSS IDSS ID(ON)
Min.
Typ.
Max.
Unit
Test Condition
VGS=0V, ID=250uA VDS=VGS, ID=1.0mA VGS=±15V,VDS=0 VDS=48V,VGS=0 VDS=10V ,VGS=4.5V VGS=10V, ID=500mA
VGS=4.5V,ID=75mA VGS=10V, ID=500mA VGS=4.5V,ID=75mA VGS=0V VDS=25V f=1.0MHz
Drain-Source On-Voltage
0.45
Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
Ciss Coss Crss
VDS=10V,ID=200mA
Switching Characteristics
Parameter
Turn-on Delay Time Turn-off Delay Time
Symbol
TOFF
Min.
Typ.
Max.
Unit
Test Condition
VDD=15V,ID=500mA RG=25 RL=30 VGEN=10V
Notes: Pulse width300us, dutycycle2%.
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
2N7000
200mA,60V,RDS(ON) Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
changing specification will informed individual
01-Jun-2002 Rev.
Page
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