VEC2905 VEC2905 Features Epitaxial Planar Silicon Trans

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VEC2905 VEC2905 Features Epitaxial Planar Silicon Trans

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Ordering number ENA1045
VEC2905
VEC2905
Features
Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Composite type, facilitatiing high-density mounting. Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Collector Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS Tstg PW10s, duty cycle1% When mounted ceramic substrate (900mm20.8mm) 1unit +150 VCBO VCEO VECO VEBO Tstg When mounted ceramic substrate (900mm20.8mm) 1unit -6.5 -600 +150 Symbol Conditions Ratings Unit
Marking
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20608PE TC-00001176 A1045-1/6
VEC2905
Electrical Characteristics Ta=25°C
Parameter [TR] Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) ID=-1mA, VGS=0V VDS=-20V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-1.5A ID=-2A, VGS=-4.5V ID=-1A, VGS=-2.5V ID=-0.3A, VGS=-1.8V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-10V, VGS=-4.5V, ID=-3A VDS=-10V, VGS=-4.5V, ID=-3A VDS=-10V, VGS=-4.5V, ID=-3A IS=-3A, VGS=0V -0.4 -0.88 -1.2 -1.3 ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)ECO V(BR)EBO tstg VCB=-30V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=-500mA VCE=-10V, IC=-500mA VCB=-10V, f=1MHz IC=-1.5A, IB=-30mA IC=-1.5A, IB=-75mA IC=-1.5A, IB=-30mA IC=-10A, IE=0A IC=-1mA, RBE= IC=-10A, RCB= IE=-10A, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. -160 -110 -0.83 -6.5 -235 -160 -1.2 -0.1 -0.1 Symbol Conditions Ratings Unit
Note specifications shown above each individual transistor.
Package Dimensions unit (typ)
7012-010
0.25
0.15
Electrical Connection
0.25
0.65
Emitter Base Drain Drain Source Gate Collector Collector
view
0.75
Emitter Base Drain Drain Source Gate Collector Collector SANYO VEC8
0.07
A1045-2/6
VEC2905
Switching Time Test Circuit
[TR] [FET]
PW=20s D.C.1% INPUT 100F VBE=5V 470F OUTPUT
VDD= -10V
-4.5V
-1.5A RL=6.67 VOUT
PW=10s D.C.1%
VEC2905
VCC= -12V
IC=20IB1=-20IB2=500mA
-2.0
[TR]
-4.0 -3.5
[TR]
-40mA
-1.6
-10mA
VCE=
-8mA
Collector Current,
Collector Current,
-50m
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5
-6mA
-4mA
-1.2
-0.8
-2mA
-0.4
-200 -400 -600
IB=0mA
-800 -1000 IT01743
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IT01744
Collector-to-Emitter Voltage,
1000
Base-to-Emitter Voltage,
-1.0
[TR]
VCE(sat)
Ta=7
25°C -25°C
[TR]
VCE=
Ta=75°C
IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat)
Current Gain,
-0.1
25°C -25°C
-0.01 -0.1 -1.0 IT01746
-0.01
-0.1
-1.0
Collector Current,
IT01745
-0.001 -0.01
Collector Current,
A1045-3/6
VEC2905
VCE(sat)
[TR]
VBE(sat)
[TR]
IB=50
IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat)
-1.0 -0.1
Base-to-Emitter Saturation Voltage, VBE(sat)
-1.0
-25°C
75°C
25°C
=75°
-0.01 -0.01
-0.1
-1.0
Collector Current,
IT01747
-0.1 -0.01
-0.1
-1.0
Collector Current,
1000
IT01748
[TR]
f=1MHz
[TR] VCE= -10V
Gain-Bandwidth Product,
Output Capacitance,
-1.0
IT01749
-100
-1000
Collector-to-Base Voltage,
-1.0 -0.1
Collector Current,
IT01750
[TR]
ICP=
Collector Dissipation,
[TR] When mounted ceramic substrate (900mm20.8mm) 1unit
Collector Current,
-0.01 -0.1
Ta=25°C Single pulse When mounted ceramic substrate (900mm20.8mm) 1unit
-1.0
IT13273
Collector-to-Emitter Voltage,
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8
Ambient Temperature,
IT13274
[FET]
VDS= -10V
[FET]
-2.0V
Drain Current,
-4.0
Drain Current,
-4.5
-0.9
-1.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
VGS= -1.5V
-2.0
Drain-to-Source Voltage,
IT06416
Gate-to-Source Voltage,
IT06417
A1045-4/6
VEC2905
RDS(on)
[FET]
RDS(on)
[FET]
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-4.5
Gate-to-Source Voltage,
IT06418
Ambient Temperature,
IT06419
[FET]
Forward Transfer Admittance,
VDS= -10V
[FET] VGS=0V
-0.1
-0.1 -1.0 IT06420
-0.01 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2
-0.001 -0.2
Drain Current,
Time
[FET]
Ciss, Coss, Crss
Diode Forward Voltage,
Source Current,
-1.0
IT06421
[FET]
VDD= -10V VGS= -4.5V
1000
f=1MHz
Switching Time, Time
td(off)
Ciss, Coss, Crss
Ciss
td(on)
Coss
Crss
-0.1
-1.0
Drain Current,
-4.5 -4.0 -3.5
IT06422
Drain-to-Source Voltage,
IT06423
[FET]
[FET]
Gate-to-Source Voltage,
VDS= -10V
IDP= -12A
PW10s
Drain Current,
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 IT06424
-1.0 -0.1
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse When mounted ceramic substrate (900mm20.8mm) 1unit
-0.1 -1.0
Total Gate Charge,
Drain-to-Source Voltage,
IT13275
A1045-5/6
VEC2905
[FET]
Allowable Power Dissipation,
When mounted ceramic substrate (900mm20.8mm) 1unit
Ambient Temperature,
IT13276
Note usage Since VEC2905 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information February, 2008. Specifications information herein subject change without notice.
A1045-6/6

VEC2905 VEC2905 Features Epitaxial Planar Silicon Trans

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