SCH2825 MOSFET N-Channel Silicon MOSFET Schottky Barrier Diode

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SCH2825 MOSFET N-Channel Silicon MOSFET Schottky Barrier Diode

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Ordering number ENA1006
SCH2825
MOSFET N-Channel Silicon MOSFET Schottky Barrier Diode
SCH2825
Features
General-Purpose Switching Device Applications
Composite type with N-Channel Silicon MOSFET Schottky Barrier Diode contained package facilitating high-density mounting. [MOSFET] ON-resistance. Ultrahigh-speed switching. drive. [SBD] Short reverse recovery time. forward voltage.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IFSM Tstg 50Hz sine wave, cycle +125 +125 VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm20.8mm) 1unit +125 Symbol Conditions Ratings Unit
Marking
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1207PE TC-00001031 A1006-1/6
SCH2825
Electrical Characteristics Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time IR=0.5mA IF=0.5A VR=15V VR=10V, f=1MHz IF=IR=100mA, specified Test Circuit. 0.42 0.48 V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=800mA ID=800mA, VGS=10V ID=400mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=10V, ID=1.6A VDS=10V, VGS=10V, ID=1.6A VDS=10V, VGS=10V, ID=1.6A IS=1.6A, VGS=0V 10.6 0.33 0.29 0.82 Symbol Conditions Ratings Unit
Package Dimensions
unit (typ) 7028-003
Electrical Connection
0.05
Gate Source Anode Cathode Drain Drain
view
0.05
0.56 0.25
Gate Source Anode Cathode Drain Drain SANYO SCH6
A1006-2/6
SCH2825
Switching Time Test Circuit
[MOSFET]
Test Circuit
[SBD]
VDD=15V
Duty10%
100mA
ID=800mA RL=18.75
PW=10µs D.C.1%
VOUT
SCH2825
6.0V
[MOSFET]
VDS=10V
100mA
10µs
Drain Current,
8.0V
Drain Current,
10.0V
15.0V
3.5V
VGS=2.5V
3.0V
10mA
[MOSFET]
Drain-to-Source Voltage, IT13107 RDS(on) [MOSFET] Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
Gate-to-Source Voltage, IT13108 RDS(on) [MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on)
ID=0.4A 0.8A
=10V
0.8A
Gate-to-Source Voltage,
IT13131
Ambient Temperature,
IT13132
A1006-3/6
SCH2825
[MOSFET]
Forward Transfer Admittance,
0.01 0.001
VDS=10V
[MOSFET]
VGS=0V
Source Current,
0.01
0.01
Drain Current,
IT13111
0.001
25°C 75°C
Time
[MOSFET]
VDD=15V VGS=10V
Diode Forward Voltage, IT13112 Ciss, Coss, Crss [MOSFET] f=1MHz
Switching Time, Time
Ciss, Coss, Crss
Ciss
td(off)
td(on)
Coss
Crss
IT13113
Drain Current,
[MOSFET]
IT13114 Drain-to-Source Voltage, [MOSFET]
Gate-to-Source Voltage,
VDS=10V ID=1.6A
IDP=6.4A ID=1.6A
Drain Current,
PW10µs
Operation this area limited RDS(on).
0.01
Ta=25°C Single pulse Mounted ceramic board (900mm20.8mm) 1unit
Total Gate Charge,
IT13133
Drain-to-Source Voltage,
IT13134
[MOSFET]
Allowable Power Dissipation,
Ambient Temperature,
IT13135
A1006-4/6
SCH2825
[SBD]
100000
[SBD]
Reverse Current,
Forward Current,
10000 1000
Ta=12
100°C
75°C
0.01 IT07927
50°C
25°C
75°C 50°C 25°C
IT07928
Forward Voltage,
Average Forward Power Dissipation, PF(AV)
0.35
PF(AV)
Reverse Voltage,
[SBD]
[SBD]
Rectangular wave
0.25 360°
f=1MHz
Interterminal Capacitance,
0.30
Sine wave
0.20 180° 0.15 360°
0.10
0.05
Rectangular wave =60° Rectangular wave =120° Rectangular wave =180° Sine wave =180°
Average Output Current,
IT08187
IFSM
Reverse Voltage,
IT07891
[SBD]
Surge Forward Current, IFSM(Peak)
Current waveform 50Hz sine wave
20ms
0.01
Time,
ID00338
A1006-5/6
SCH2825
Note usage Since SCH2825 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information December, 2007. Specifications information herein subject change without notice.
A1006-6/6

SCH2825 MOSFET N-Channel Silicon MOSFET Schottky Barrier Diode

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