SCH2311 P-Channel Silicon MOSFET SCH2311 Features

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SCH2311 P-Channel Silicon MOSFET SCH2311 Features

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Ordering number ENA1044
SCH2311
P-Channel Silicon MOSFET
SCH2311
Features
General-Purpose Switching Device Applications
drive. Composite type with MOSFETs contained single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10s, duty cycle1% When mounted ceramic substrate (900mm20.8mm) 1unit Conditions Ratings -120 -480 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=-1mA, VGS=0V VDS=-60V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-100A VDS=-10V, ID=-60mA ID=-60mA, VGS=-10V ID=-30mA, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz -1.2 13.5 Ratings -2.6 Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20608PE TC-00001174 A1044-1/4
SCH2311
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-30V, VGS=-10V, ID=-120mA VDS=-30V, VGS=-10V, ID=-120mA VDS=-30V, VGS=-10V, ID=-120mA IS=-120mA, VGS=0V Ratings 36.5 0.16 -0.85 -1.2 Unit
Package Dimensions
unit (typ) 7028-006
0.05
Electrical Connection
Source1 Gate1 Drain2 Source2 Gate2 Drain1
view
0.05
0.56
Source1 Gate1 Drain2 Source2 Gate2 Drain1 SANYO SCH6
Switching Time Test Circuit
-10V -60mA RL=500 VOUT VDD= -30V
0.25
PW=10s D.C.1%
SCH2311
Rg=5k
A1044-2/4
SCH2311
-120
-120
VDS= -10V
-100
-100
Drain Current,
Drain Current,
-2.5
-0.2 -0.4 -0.6 -0.8 -1.0 IT10865
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5
Drain-to-Source Voltage,
RDS(on)
Gate-to-Source Voltage,
25°C -25°C
IT10866
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
-60mA
Static Drain-to-Source On-State Resistance, RDS(on)
-30mA
Gate-to-Source Voltage,
IT10867 -1000
Ambient Temperature,
IT10868
VGS=0V
Forward Transfer Admittance,
VDS= -10V
Source Current,
-100
Ta=7
-0.4
-1.0 -0.1 -0.2
-1.0
-100
-0.6
-25°C
-0.8
25°C
-1.0
-1.2
-1.4 IT10870
Drain Current,
1000
IT10869
Time
td(off)
Ciss, Coss, Crss
f=1MHz Ciss
Diode Forward Voltage,
VDD= -30V VGS= -10V
Switching Time, Time
Ciss, Coss, Crss
-0.01
Coss
td(on)
Crss
-0.1
IT10872
Drain Current,
IT10871
Drain-to-Source Voltage,
A1044-3/4
SCH2311
VDS= -30V -120mA
Drain Current,
-1.0 -0.1
IDP= -480mA PW10s
Gate-to-Source Voltage,
-120mA
-0.01
Operation this area limited RDS(on).
-0.001 -0.1
Ta=25°C Single pulse When mounted ceramic substrate (900mm20.8mm) 1unit
-1.0
Total Gate Charge,
IT10873
When mounted ceramic substrate (900mm20.8mm) 1unit
Drain-to-Source Voltage,
-100 IT13272
Allowable Power Dissipation,
Ambient Temperature,
IT13269
Note usage Since SCH2311 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information February, 2008. Specifications information herein subject change without notice.
A1044-4/4

SCH2311 P-Channel Silicon MOSFET SCH2311 Features

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