FW705 FW705 Features P-Channel Silicon MOSFET Gene

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FW705 FW705 Features P-Channel Silicon MOSFET Gene

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Ordering number ENA1030
FW705
FW705
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Composite type with P-channel MOSFET driving from 2.5V supply voltage contained single package. High-density mounting.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg Duty cycle1% When mounted ceramic substrate (1500mm20.8mm) 1unit, PW10s When mounted ceramic substrate (1500mm20.8mm), PW10s Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0V VDS=-20V, VGS=0V VGS= ±8V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-6A ID=-6A, VGS=-4V ID=-3A, VGS=-2.5V -0.4 Ratings -1.4 Unit
Marking W705
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21308PA TC-00001209 A1030-1/4
FW705
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) td(off) Conditions VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-10V, VGS=-4V, ID=-6A VDS=-10V, VGS=-4V, ID=-6A VDS=-10V, VGS=-4V, ID=-6A IS=-6A, VGS=0V Ratings 1720 18.4 -0.82 -1.2 Unit
Package Dimensions
unit (typ) 7005-003
Electrical Connection
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
view
0.43
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1 SANYO SOP8
0.595
1.27
Switching Time Test Circuit
RL=1.67 VDD= -10V
PW=10s D.C.1%
VOUT
FW705
A1030-2/4
FW705
-8.0V -6.0V
VDS= -10V
-4.0V -2.5
Drain Current,
-5.0
-1.5V
Drain Current,
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4 -1.6
VGS= -1.0V
-1.8
-2.0
Drain-to-Source Voltage,
IT09896
Gate-to-Source Voltage,
IT09897
RDS(on)
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-2.5
-4.0
Gate-to-Source Voltage,
IT09898 -1.0
Ambient Temperature,
IT09900
VGS=0V
Forward Transfer Admittance,
-0.01
VDS= -10V
Source Current,
-0.1 -1.0 IT09901 -0.01 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1
Drain Current,
1000
Time
VDD= -10V VGS=
Ciss, Coss, Crss
f=1MHz
Diode Forward Voltage,
-0.1
-25°
25°C
IT09902
Switching Time, Time
td(off)
Ciss, Coss, Crss
Ciss
1000
td(on)
Coss Crss
-0.01
-0.1 -1.0
Drain Current,
IT09903
IT09904
Drain-to-Source Voltage,
A1030-3/4
FW705
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
VDS= -10V Drain Current,
Gate-to-Source Voltage,
-100 -1.0 -0.1
IDP= -52A
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse When mounted ceramic substrate (1500mm20.8mm)
-0.1 -1.0
Total Gate Charge,
IT09906
Drain-to-Source Voltage, Allowable Power Dissipation, (FET1)
IT13258
When mounted ceramic substrate (1500mm20.8mm), PW10s
PD(FET1) PD(FET2)
When mounted ceramic substrate (1500mm20.8mm), PW10s
Allowable Power Dissipation,
IT13325
Ambient Temperature,
IT13259
Allowable Power Dissipation, (FET2)
Note usage Since FW705 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information February, 2008. Specifications information herein subject change without notice.
A1030-4/4

FW705 FW705 Features P-Channel Silicon MOSFET Gene

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