MCH3475 MCH3475 Features N-Channel Silicon MOSFET

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

MCH3475 MCH3475 Features N-Channel Silicon MOSFET

Datasheet Thumbnail

Top Searches for this datasheet

Ordering number ENA1000
MCH3475
MCH3475
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Ultrahigh-speed switching. drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm20.8mm) Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.9A ID=0.9A, VGS=10V ID=0.5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.66 Ratings Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1207PE TC-00001029 A1000-1/4
MCH3475
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A IS=1.8A, VGS=0V Ratings 10.5 0.33 0.29 0.86 Unit
Package Dimensions
unit (typ) 7019A-003
Switching Time Test Circuit
0.15
VDD=15V
0.25
0.02
PW=10µs D.C.1%
ID=0.9A RL=16.7 VOUT
0.25
0.65
0.85
MCH3475
0.07
Gate Source Drain SANYO MCPH3
6.0V
VDS=10V
Drain Current,
8.0V
Drain Current,
10.0V
15.0V
3.5V
VGS=2.5V
3.0V
Drain-to-Source Voltage,
IT13107
Gate-to-Source Voltage,
IT13108
A1000-2/4
MCH3475
RDS(on)
Ta=25°C
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
ID=0.5A 0.9A
10V,
Gate-to-Source Voltage,
IT13109
Ambient Temperature,
IT13110
VGS=0V
Forward Transfer Admittance,
0.01 0.001
VDS=10V
Source Current,
0.01
0.01
Drain Current,
IT13111
0.001
75°C
25°C
IT13112
Time
VDD=15V VGS=10V
Ciss, Coss, Crss
f=1MHz
Diode Forward Voltage,
Switching Time, Time
td(off)
Ciss, Coss, Crss
Ciss
td(on)
Coss
Crss
IT13113 IT13114
Drain Current,
Drain-to-Source Voltage,
Gate-to-Source Voltage,
VDS=10V ID=1.8A
IDP=7.2A ID=1.8A
Drain Current,
PW10µs
Operation this area limited RDS(on).
0.01
Ta=25°C Single pulse Mounted ceramic board (900mm20.8mm)
Total Gate Charge,
IT13115
Drain-to-Source Voltage,
IT13116
A1000-3/4
MCH3475
Allowable Power Dissipation,
Ambient Temperature,
IT13117
Note usage Since MCH3475 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information December, 2007. Specifications information herein subject change without notice.
A1000-4/4

MCH3475 MCH3475 Features N-Channel Silicon MOSFET

Top Searches for this datasheet

Other recent searches