FW377 N-Channel P-Channel Silicon MOSFETs FW377 Feature

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FW377 N-Channel P-Channel Silicon MOSFETs FW377 Feature

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Ordering number ENA0977
FW377
N-Channel P-Channel Silicon MOSFETs
FW377
Features
General-Purpose Switching Device Applications
motor drivers, inverters. Composite type with N-channel MOSFET P-channel MOSFET driving from supply voltage contained single package. High-density mounting.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW100ms) Drain Current (PW10µs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg duty cycle1% duty cycle1% duty cycle1% Mounted ceramic board (1500mm20.8mm)1unit, PW10s Mounted ceramic board (1500mm20.8mm), PW10s Conditions N-channel +150 P-channel Unit
Marking W377
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2107PA TC-00001038 A0977-1/6
FW377
Electrical Characteristics Ta=25°C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) ID=-1mA, VGS=0V VDS=-35V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-5A ID=-5A, VGS=-10V ID=-3A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-20V, VGS=-10V, ID=-5A VDS=-20V, VGS=-10V, ID=-5A VDS=-20V, VGS=-10V, ID=-5A IS=-5A, VGS=0V -1.2 1200 -0.85 -1.5 -2.6 V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=3A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A IS=6A, VGS=0V 1050 0.84 Symbol Conditions Ratings Unit
Package Dimensions
unit (typ) 7005-003
Electrical Connection
0.43
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1 SANYO SOP8
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
0.595
1.27
view
A0977-2/6
FW377
Switching Time Test Circuit
[N-channel]
ID=6A RL=3.3 VDD=20V
[P-channel]
-10V
VDD= -20V
RL=4
PW=10µs D.C.1%
VOUT PW=10µs D.C.1%
VOUT
FW377
FW377
[Nch]
VDS=10V
[Nch]
Drain Current,
Drain Current,
75°C
VGS=2.5V
25°C
Drain-to-Source Voltage,
IT13051
RDS(on)
Gate-to-Source Voltage,
IT13052
[Nch] Ta=25°C
RDS(on)
[Nch]
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
ID=3A
=10V
Gate-to-Source Voltage,
IT13053
Ambient Temperature,
IT13054
[Nch]
Forward Transfer Admittance,
VDS=10V
[Nch] VGS=0V
Source Current,
0.01 IT13056
0.01
Drain Current,
IT13055
Diode Forward Voltage,
Ta=7
-25°C
25°C
A0977-3/6
FW377
Time
[Nch] VDD=20V VGS=10V
Ciss, Coss, Crss
Ciss, Coss, Crss
[Nch] f=1MHz
Switching Time, Time
1000
Ciss
td(off)
td(on)
Coss
Crss
Drain Current,
IT13057
IT13058
Drain-to-Source Voltage,
VDS=20V ID=6A
[Nch]
IDP=24A ID=6A
[Nch] PW10µs
Gate-to-Source Voltage,
IT13059
Drain Current,
Operation this area limited RDS(on).
0.01 0.01
Ta=25°C Single pulse Mounted ceramic board (1500mm20.8mm) 1unit
Total Gate Charge,
-16V
-5.0 -4.5 -4.0
-10V
Drain-to-Source Voltage,
IT13060
[Pch]
[Pch]
VDS= -10V
Drain Current,
Drain Current,
-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-0.5
-1.0
-1.5
-2.0
Ta=7 -25°C
-2.5 -3.0 -3.5
-2.5
-4.0
Drain-to-Source Voltage,
IT13061
RDS(on)
Gate-to-Source Voltage,
IT13062
[Pch] Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on)
Gate-to-Source Voltage,
IT13063
Ambient Temperature,
IT13064
A0977-4/6
FW377
VDS= -10V
[Pch]
Forward Transfer Admittance,
-1.0
[Pch] VGS=0V
-0.1
-0.01
-0.1
-1.0
Drain Current,
IT13065
-0.01 -0.2
-0.4
Ta=7
-0.6
25°C -25°C
-0.8
Source Current,
-1.0
-1.2 IT13066
Diode Forward Voltage,
Time
[Pch] VDD= -20V VGS= -10V
Ciss, Coss, Crss
Ciss
[Pch] f=1MHz
Switching Time, Time
td(off)
Ciss, Coss, Crss
1000
Coss
td(on)
-0.1 -1.0 IT13067
Crss
IT13068
Drain Current,
Drain-to-Source Voltage,
[Pch]
-1.0 -0.1
IDP= -20A
[Pch]
Gate-to-Source Voltage,
VDS= -20V
PW10µs
IT13069
Drain Current,
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse Mounted ceramic board (1500mm20.8mm) 1unit
7-0.1 7-1.0 IT13070 Drain-to-Source Voltage, PD(FET1) PD(FET2) [Nch, Pch]
Total Gate Charge,
Allowable Power Dissipation,
Mounted ceramic board (1500mm20.8mm) PW10s
Allowable Power Dissipation, (FET1)
[Nch, Pch]
Mounted ceramic board (1500mm20.8mm) PW10s
Ambient Temperature,
IT13071
Allowable Power Dissipation, (FET2)
IT13072
A0977-5/6
FW377
Note usage Since FW377 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information November, 2007. Specifications information herein subject change without notice.
A0977-6/6

FW377 N-Channel P-Channel Silicon MOSFETs FW377 Feature

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