MCH6325 P-Channel Silicon MOSFET MCH6325 Features

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MCH6325 P-Channel Silicon MOSFET MCH6325 Features

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Ordering number ENA0969
MCH6325
P-Channel Silicon MOSFET
MCH6325
Features
General-Purpose Switching Device Applications
ON-resistance. drive
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm20.8mm) Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0V VDS=-60V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-1A ID=-1A, VGS=-10V ID=-0.5A, VGS=-4V -1.2 Ratings -2.6 Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1707PE TC-00000955 A0969-1/4
MCH6325
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) td(off) Conditions VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-30V, VGS=-10V, ID=-2A VDS=-30V, VGS=-10V, ID=-2A VDS=-30V, VGS=-10V, ID=-2A IS=-2A, VGS=0V Ratings 10.5 Unit
0.84
-1.2
Package Dimensions
unit (typ) 7022A-009
Switching Time Test Circuit
VDD= -30V
0.25
0.15
-10V RL=30
0.02
PW=10µs D.C.1%
VOUT
0.25
0.65
MCH6325
0.85
Drain Drain Gate Source Drain Drain SANYO MCPH6
0.07
-2.0
-4.0
VDS= -10V
-10.
-1.8 -1.6
-3.5 -3.0 -2.5 -2.0 -1.5
Drain Current,
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 -0.1
VGS= -2.5V
Drain Current,
-0.5 -1.0 -1.5 -2.0
-0.5 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-1.0
-2.5
25°C -25°C
-3.0
-3.5
-4.0
Drain-to-Source Voltage,
IT13035
Gate-to-Source Voltage,
IT13036
A0969-2/4
MCH6325
RDS(on)
Ta=25°C
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-1.0A -0.5A
Gate-to-Source Voltage,
IT13037 -1.0
Ambient Temperature,
IT13038
VGS=0V
Forward Transfer Admittance,
VDS= -10V
Ta=7
-0.4
-0.1
-0.01
-0.1
-1.0
Drain Current,
1000
IT13039
-0.01 -0.2
-0.6
-25°C
-0.8
25°C
Source Current,
-1.0
-1.2
-1.4 IT13040
Time
VDD= -30V VGS= -10V
1000
Ciss, Coss, Crss
f=1MHz Ciss
Diode Forward Voltage,
Switching Time, Time
-0.01 -0.1 -1.0 IT13041
(off)
Ciss, Coss, Crss
td(on)
Coss Crss
IT13042
Drain Current,
Drain-to-Source Voltage,
Gate-to-Source Voltage,
VDS= -30V
IDP=
Drain Current,
-1.0 -0.1
PW10µs
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse Mounted ceramic board (900mm20.8mm)
7-0.1 7-1.0
7-100 IT13044
Total Gate Charge,
IT13043
Drain-to-Source Voltage,
A0969-3/4
MCH6325
Allowable Power Dissipation,
Ambient Temperature,
IT13045
Note usage Since MCH6325 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellctual property rights which resulted from technical information products mentioned above.
This catalog provides information October, 2007. Specifications information herein subject change without notice.
A0969-4/4

MCH6325 P-Channel Silicon MOSFET MCH6325 Features

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