ECH8651R N-Channel Silicon MOSFET ECH8651R Features

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ECH8651R N-Channel Silicon MOSFET ECH8651R Features

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Ordering number ENA1010
ECH8651R
N-Channel Silicon MOSFET
ECH8651R
Features
General-Purpose Switching Device Applications
ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited charging discharging switch. Common-drain type. Halogen free compliance.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10s, duty cycle1% When mounted ceramic substrate (900mm20.8mm) 1unit When mounted ceramic substrate (900mm20.8mm) Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A Ratings Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40908PE TC-00001313 A1010-1/4
ECH8651R
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 td(on) td(off) Conditions ID=5A, VGS=4.5V ID=5A, VGS=4.0V ID=5A, VGS=3.1V ID=2.5A, VGS=2.5V specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A IS=10A, VGS=0V Ratings 10.5 12.5 1000 4000 2500 0.77 17.5 Unit
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Package Dimensions
unit (typ) 7011A-003
View
0.25
Electrical Connection
0.15
0.02
Source1 Gate1 Source2 Gate2 Drain Drain Drain Drain
view
0.25
0.65
Source1 Gate1 Source2 Gate2 Drain Drain Drain Drain
Bottom View
0.07
SANYO ECH8
Switching Time Test Circuit
4.5V ID=5A RL=2 VDD=10V
PW=10s D.C.1%
VOUT
ECH8651R
Rg=1k
A1010-2/4
ECH8651R
3.1V
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
1.5V
Drain Current,
4.5V
ID=2.5A
5.0A
VGS=1V
IT13148
IT13149
Drain-to-Source Voltage,
Gate-to-Source Voltage,
RDS(on)
Forward Transfer Admittance,
VDS=10V
Static Drain-to-Source On-State Resistance, RDS(on)
=2.5 =2.5 3.1V =4.5 4.0V,
IT13150
Ambient Temperature,
VGS=0V
Drain Current,
1000
IT13151
Time
(off)
Switching Time, Time
VDD=10V VGS=4V
Source Current,
0.01
1000
td(on)
0.001
Diode Forward Voltage,
IT13152
Drain Current,
IT13295
IDP=60A ID=10A
Gate-to-Source Voltage,
VDS=10V ID=10A
IT13296
Drain Current,
Operation this area limited RDS(on).
PW10s
Ta=25°C Single pulse When mounted ceramic substrate (900mm20.8mm) 1unit 0.01 0.01
Total Gate Charge,
Drain-to-Source Voltage,
IT13390
A1010-3/4
ECH8651R
When mounted ceramic substrate (900mm20.8mm)
Allowable Power Dissipation,
Ambient Temperature,
IT13154
Note usage Since ECH8651R MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information April, 2008. Specifications information herein subject change without notice.
A1010-4/4

ECH8651R N-Channel Silicon MOSFET ECH8651R Features

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