3HN04S N-Channel Silicon MOSFET 3HN04S Features Ge

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3HN04S N-Channel Silicon MOSFET 3HN04S Features Ge

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Ordering number ENA1014
3HN04S
N-Channel Silicon MOSFET
3HN04S
Features
General-Purpose Switching Device Applications
drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10s, duty cycle1% When mounted glass epoxy substrate (145mm80mm1.6mm) Conditions Ratings 0.15 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=150mA ID=150mA, VGS=10V ID=80mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11608PE TC-00001098 A1014-1/4
3HN04S
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA IS=300mA, VGS=0V Ratings 17.5 1.68 0.54 0.12 0.86 Unit
Package Dimensions
unit (typ) 7027-004
Switching Time Test Circuit
VDD=15V
PW=10s D.C.1%
ID=300mA RL=50 VOUT
Gate Source Drain SANYO SMCP
0.75
3HN04S
Rg=1.2k
0.30
0.30
VDS=10V
0.25
0.25
Drain Current,
Drain Current,
0.20
0.20
0.15
0.15
0.10
0.10
VGS=3V
0.05
0.05
Drain-to-Source Voltage,
IT10821
RDS(on)
Gate-to-Source Voltage,
IT10822
RDS(on)
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) 150mA
Static Drain-to-Source On-State Resistance, RDS(on)
ID=80mA
=150m 10V,
Gate-to-Source Voltage,
IT10823
Ambient Temperature,
IT10824
A1014-2/4
3HN04S
VDS=10V
Forward Transfer Admittance,
VGS=0V
Source Current,
0.01
0.001
0.01
Drain Current,
IT10825
0.001
Ta=7
-25°
25°C
IT10826
Time
VDD=15V VGS=10V
td(off)
Ciss, Coss, Crss
f=1MHz
Diode Forward Voltage,
Switching Time, Time
Ciss
Ciss, Coss, Crss
Coss
td(on)
0.01
Crss
Drain Current,
IT10827 0.18
IT10828
Drain-to-Source Voltage,
Allowable Power Dissipation,
Gate-to-Source Voltage,
VDS=10V ID=300mA
0.16 0.15 0.14 0.12 0.10 0.08 0.06 0.04 0.02
When mounted glass epoxy substrate (145mm80mm1.6mm)
Total Gate Charge,
IT10829
Ambient Temperature,
IT13184
A1014-3/4
3HN04S
Note usage Since 3HN04S MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information January, 2008. Specifications information herein subject change without notice.
A1014-4/4

3HN04S N-Channel Silicon MOSFET 3HN04S Features Ge

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